Research on electromechanical model of micro-accelerometer based on SOI technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

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Electron Beam Absorbed Current as a Means of Locating Metal Defectivity on 45nm SOI Technology

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0413 ◽

2010 ◽

Author(s):

K. Dickson ◽

G. Lange ◽

K. Erington ◽

J. Ybarra

Keyword(s):

Electron Beam ◽

Flip Chip ◽

Back Side ◽

Soi Technology

Abstract This paper describes the use of Electron Beam Absorbed Current (EBAC) mapping performed from the back side of the device as a means of locating metallization defects on flip chip 45nm SOI technology.

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New embedded resistance/ gated diode on thin film silicon BIMOS device for advanced ESD protection in FD-SOI technology

2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ◽

10.1109/eurosoi-ulis49407.2020.9365396 ◽

2020 ◽

Author(s):

Ph. Galy ◽

G. Delahaye ◽

L. Anghel

Keyword(s):

Thin Film ◽

Thin Film Silicon ◽

Esd Protection ◽

Soi Technology

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Design and optimization of differential capacitive micro accelerometer for vibration measurement

Journal of the Mechanical Behavior of Materials ◽

10.1515/jmbm-2021-0003 ◽

2021 ◽

Vol 30 (1) ◽

pp. 19-27

Author(s):

Kumar Gomathi ◽

Arunachalam Balaji ◽

Thangaraj Mrunalini

Keyword(s):

Software Design ◽

Proof Mass ◽

Vibration Measurement ◽

Design Parameters ◽

Mechanical Sensitivity ◽

Design And Optimization ◽

Capacitive Accelerometer ◽

Cross Axis ◽

Micro Accelerometer

Abstract This paper deals with the design and optimization of a differential capacitive micro accelerometer for better displacement since other types of micro accelerometer lags in sensitivity and linearity. To overcome this problem, a capacitive area-changed technique is adopted to improve the sensitivity even in a wide acceleration range (0–100 g). The linearity is improved by designing a U-folded suspension. The movable mass of the accelerometer is designed with many fingers connected in parallel and suspended over the stationary electrodes. This arrangement gives the differential comb-type capacitive accelerometer. The area changed capacitive accelerometer is designed using Intellisuite 8.6 Software. Design parameters such as spring width and radius, length, and width of the proof mass are optimized using Minitab 17 software. Mechanical sensitivity of 0.3506 μm/g and Electrical sensitivity of 4.706 μF/g are achieved. The highest displacement of 7.899 μm is obtained with a cross-axis sensitivity of 0.47%.

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