A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature
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2008 ◽
Vol 600-603
◽
pp. 1115-1118
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2012 ◽
Vol 12
(5)
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pp. 1340-1344
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2019 ◽
Vol 8
(7)
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pp. Q3229-Q3234
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2013 ◽
Vol 347-350
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pp. 1535-1539
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