Design of Crosstalk NAND Gate Circuit Based on Interconnect Coupling Capacitance

Author(s):  
Zhiwei Zhao ◽  
Yuejun Zhang ◽  
Pengjun Wang ◽  
Huihong Zhang ◽  
Zhang Weishan
2014 ◽  
Vol 644-650 ◽  
pp. 3430-3433
Author(s):  
Yue Wei Hou ◽  
Xin Xu ◽  
Wei Wang ◽  
Xiao Bo Tian ◽  
Hai Jun Liu

Memristors have the ability to remember their last resistance and quickly switch between different states, such characteristics could make logic circuits simple in structure and fast in boolean computations. A kind of digital encoder circuit utilizing titanium oxide memristors is proposed. A logic NAND gate which acts as key part in the circuit is designed. The works in this letter also provide a practical approach for designing logic gate circuit with memristors.


2013 ◽  
Vol 722 ◽  
pp. 18-22
Author(s):  
Yu Qiong Shan ◽  
Chang Ji Shan ◽  
Jun Luo ◽  
Xiao Pan Li ◽  
Li Zhou

The TTL nand gate cannot be directly connected with the output port of two gates to set a relationship with their output information while the integrated open-collector nand gate can do so by making a proper choice of between the integrated open-collector lines and the resistances.This paper aims to analyze the calculation of, Rp, the externally connected resistance of integrated gate circuit which is made up of open-collector gate, and open-drain gate when the and-not gate, and nor gate of the Loaded gates are discussed respectively.


Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1344
Author(s):  
Liu Yang ◽  
Yuqi Wang ◽  
Zhiru Wu ◽  
Xiaoyuan Wang

In this paper, a memristor model based on FPGA (field programmable gate array) is proposed, and the circuit of AND gate and OR gate composed of memristors is built by using this model. Combined with the original NOT gate in FPGA, the NAND gate, NOR gate, XOR gate and the XNOR gate are further realized, and then the adder design is completed. Compared with the traditional gate circuit, this model has obvious advantages in size and non-volatility. At the same time, the establishment of this model will add new research methods and tools for memristor simulation research.


2015 ◽  
Vol 135 (7) ◽  
pp. 744-751
Author(s):  
Tetsuya Kobayashi ◽  
Nanako Niioka ◽  
Masa-aki Fukase ◽  
Atsushi Kurokawa

2021 ◽  
Author(s):  
Huanyin Zhou ◽  
Weiqi Huang ◽  
Jiewei Hu ◽  
Yanhui Xie ◽  
Zhanzhan Lu ◽  
...  
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Author(s):  
Martin H. Weik
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