Calculation of External Resistance of Two Gates' Circuits Connected with Different Loads

2013 ◽  
Vol 722 ◽  
pp. 18-22
Author(s):  
Yu Qiong Shan ◽  
Chang Ji Shan ◽  
Jun Luo ◽  
Xiao Pan Li ◽  
Li Zhou

The TTL nand gate cannot be directly connected with the output port of two gates to set a relationship with their output information while the integrated open-collector nand gate can do so by making a proper choice of between the integrated open-collector lines and the resistances.This paper aims to analyze the calculation of, Rp, the externally connected resistance of integrated gate circuit which is made up of open-collector gate, and open-drain gate when the and-not gate, and nor gate of the Loaded gates are discussed respectively.

2014 ◽  
Vol 644-650 ◽  
pp. 3430-3433
Author(s):  
Yue Wei Hou ◽  
Xin Xu ◽  
Wei Wang ◽  
Xiao Bo Tian ◽  
Hai Jun Liu

Memristors have the ability to remember their last resistance and quickly switch between different states, such characteristics could make logic circuits simple in structure and fast in boolean computations. A kind of digital encoder circuit utilizing titanium oxide memristors is proposed. A logic NAND gate which acts as key part in the circuit is designed. The works in this letter also provide a practical approach for designing logic gate circuit with memristors.


2020 ◽  
Vol 8 (5) ◽  
pp. 1521-1525

Fast adders are constructed mainly by Carry select adders (CSLA). Area is one of the main concerns as far as any VLSI design is considered. In connection this paper enhances the performance of self checking carry select adder by introducing un footed dynamic logic based full adder cell instead of a regular CMOS based adders. The adder is constructed with 10 transistors based on the optimization of truth tale of a full adder. A 3 transistor X-NOR gate circuit is also used instead of a conventional X-NOR circuit in the self checking path. Adders of size 4 bit and 8 bit are constructed in various technologies. The results show that the proposed structure reduces the transistor over head by almost 47% and 46% for 4bit and 8bit structures respectively. By achieving this much of reduction in area this work could be suggested for higher order VLSI structures like BIST,DCT etc.,


2021 ◽  
Author(s):  
Lokesh B ◽  
Sai Pavan kumar K ◽  
Pown M ◽  
Lakshmi B

Abstract This work explores homo and hetero-junction Tunnel field-effect transistor (TFET) based NAND and NOR logic circuits using 30 nm technology and compares their performance in terms of power consumption and propagation delay. By implementing homo-junction TFET based NAND and NOR logic circuits, it has been observed that NAND consumes less power than NOR gate, since current drawn by PTFET in pull-up network of NOR gate is higher. The delay of homo-junction TFET based NOR logic gate is lesser than that of NAND gate due to its reduced internal capacitances. To meet the enhanced performance of both NAND and NOR logic circuits, shorted and independent double gate hetero-junction (GaSb-InAs) TFETs are designed and implemented. In order to reduce both power consumption and delay further, Pseudo-derived logic is implemented in NAND and NOR logic circuits for the first time. Hetero-junction TFET based NAND with Pseudo-derived logic circuit shows lesser propagation delay of 103 times and reduction in power consumption by 0.75 times compared to hetero-junction NAND logic circuit. Hetero-junction TFET based NOR with Pseudo-derived logic shows that the reduction in power consumption is of 103 times and less propagation delay than that of hetero-junction NOR logic circuit


Author(s):  
Xi Zhu ◽  
Hongchang Long ◽  
Zhiwei Li ◽  
Hui Xu ◽  
Haijun Liu ◽  
...  
Keyword(s):  

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1344
Author(s):  
Liu Yang ◽  
Yuqi Wang ◽  
Zhiru Wu ◽  
Xiaoyuan Wang

In this paper, a memristor model based on FPGA (field programmable gate array) is proposed, and the circuit of AND gate and OR gate composed of memristors is built by using this model. Combined with the original NOT gate in FPGA, the NAND gate, NOR gate, XOR gate and the XNOR gate are further realized, and then the adder design is completed. Compared with the traditional gate circuit, this model has obvious advantages in size and non-volatility. At the same time, the establishment of this model will add new research methods and tools for memristor simulation research.


2018 ◽  
Vol 41 ◽  
Author(s):  
Duane T. Wegener ◽  
Leandre R. Fabrigar

AbstractReplications can make theoretical contributions, but are unlikely to do so if their findings are open to multiple interpretations (especially violations of psychometric invariance). Thus, just as studies demonstrating novel effects are often expected to empirically evaluate competing explanations, replications should be held to similar standards. Unfortunately, this is rarely done, thereby undermining the value of replication research.


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