Analysis of Switching Characteristics of Wide SOA and High Reliability 100 V N-LDMOS Transistor with Dual RESURF and Grounded Field Plate Structure

2021 ◽  
Author(s):  
Anna Kuwana ◽  
Jun-Ichi Matsuda ◽  
Haruo Kobayashi
Keyword(s):  
High Reliability ◽  
Plate Structure ◽  
Field Plate ◽  
Switching Characteristics

Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

2014 ◽  
Vol 64 ◽  
pp. 152-157 ◽  
Author(s):  
Sarosij Adak ◽  
Sanjit Kumar Swain ◽  
Avtar Singh ◽  
Hemant Pardeshi ◽  
Sudhansu Kumar Pati ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Source Field

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Novel field plate structure of AlGaN/GaN HEMTs

2007 ◽  
Vol 4 (7) ◽  
pp. 2736-2739 ◽  
Author(s):  
Akira Nakajima ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts

A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs

2006 ◽  
Author(s):  
Young-Hwan Choi ◽  
Min-Woo Ha ◽  
Jiyong Lim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts
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