Luminescent properties of blue-emitting CaS:Cu,F thin films

Author(s):  
Y. Nakanishi ◽  
A. Kawasumi ◽  
T. Aoki ◽  
H. Tatsuoka ◽  
H. Kuwabara ◽  
...  
2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.


1993 ◽  
Vol 65-66 ◽  
pp. 515-519 ◽  
Author(s):  
Y. Nakanishi ◽  
T. Ito ◽  
Y. Hatanaka ◽  
G. Shimaoka

2003 ◽  
Vol 94 (4) ◽  
pp. 2411-2416 ◽  
Author(s):  
Shinobu Fujihara ◽  
Akira Suzuki ◽  
Toshio Kimura

2003 ◽  
Vol 256 (3-4) ◽  
pp. 305-316 ◽  
Author(s):  
C. Chartier ◽  
C. Barthou ◽  
P. Benalloul ◽  
S. Chenot ◽  
J.M. Frigerio

2012 ◽  
Vol 407 (10) ◽  
pp. 1660-1663 ◽  
Author(s):  
H.C. Swart ◽  
O.M. Ntwaeaborwa ◽  
P.D. Nsimama ◽  
J.J. Terblans

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.


2011 ◽  
Vol 130-134 ◽  
pp. 23-26 ◽  
Author(s):  
Shao Feng Yan ◽  
Kai Ge Miao

The Al2O3 films doped with Ce3 + were deposited on slides by the medium-frequency reaction magnetron sputtering process, to which the power is constant, Ar flow rate 70 sccm, O2 flow rate 25~45sccm and sputtering time 90min at room temperature. The relationship between the luminescent properties of Al2O3:Ce3 + films and the doped amount of Ce3 + in the films was studied. The presence of Ce3 + and stoichiometry of those films were determined. It was observed that the total luminescence intensity increases and the peak positions are strongly dependent on Ce3+ concentration in the films. The analysis of luminescent excitation spectra showed that the luminance is due to the Ce3+ concentration in the cerium chloride aggregate formed in the films.


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