A 32-Gb/s backplane transceiver with on-chip AC-coupling and low latency CDR in 32-nm SOI CMOS technology

2013 ◽  
Author(s):  
Gautam R. Gangasani ◽  
John F. Bulzacchelli ◽  
Troy Beukema ◽  
Chun-Ming Hsu ◽  
William Kelly ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Low Latency ◽  
On Chip ◽  
Soi Cmos

A 32 Gb/s Backplane Transceiver With On-Chip AC-Coupling and Low Latency CDR in 32 nm SOI CMOS Technology

2014 ◽  
Vol 49 (11) ◽  
pp. 2474-2489 ◽  
Author(s):  
Gautam R. Gangasani ◽  
Chun-Ming Hsu ◽  
John F. Bulzacchelli ◽  
Troy Beukema ◽  
William Kelly ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Low Latency ◽  
On Chip ◽  
Soi Cmos

Pre-allocated Path Based Low Latency Router Architecture for Network-on-chip

2014 ◽  
Vol 35 (2) ◽  
pp. 341-346
Author(s):  
Xiao-fu Zheng ◽  
Hua-xi Gu ◽  
Yin-tang Yang ◽  
Zhong-fan Huang
Keyword(s):  
Network On Chip ◽  
Low Latency ◽  
Router Architecture ◽  
On Chip

scholarly journals 1.0 V-0.18 µm CMOS Tunable Low Pass Filters with 73 dB DR for On-Chip Sensing Acquisition Systems

Electronics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 563
Author(s):  
Jorge Pérez-Bailón ◽  
Belén Calvo ◽  
Nicolás Medrano
Keyword(s):  
Power Consumption ◽  
Dynamic Range ◽  
Low Voltage ◽  
Cutoff Frequency ◽  
Cmos Technology ◽  
Active Area ◽  
Current Steering ◽  
Low Pass ◽  
On Chip ◽  
Low Pass Filters

This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces.

scholarly journals Toward a fully integrated automotive radar system-on-chip in 22 nm FD-SOI CMOS

2021 ◽  
pp. 1-9
Author(s):  
Philipp Ritter
Keyword(s):  
Millimeter Wave ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Digital Signal ◽  
Cmos Technology ◽  
Radar System ◽  
Circuit Board ◽  
Processing Unit ◽  
Automotive Radar ◽  
On Chip

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

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