Compact Modeling and Short-Channel Effects of Nanowire MOS Transistors (Invited)

2018 ◽  
Author(s):  
Hei Wong
Keyword(s):  
Compact Modeling ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Channel Effects

Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors

2020 ◽  
Vol 67 (11) ◽  
pp. 5082-5090
Author(s):  
Jakob Pruefer ◽  
Jakob Leise ◽  
Ghader Darbandy ◽  
Aristeidis Nikolaou ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Compact Modeling ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Short Channel ◽  
Channel Effects

scholarly journals Leakage Current Analysis of 6T & 7T-SRAM using FINFETs at 22nm Technology

2019 ◽  
Vol 8 (12) ◽  
pp. 2983-2986
Keyword(s):  
Memory Cell ◽  
Leakage Power ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Current Analysis ◽  
Leakage Currents ◽  
Short Channel ◽  
Channel Effects ◽  
Package Density ◽  
And Performance

Persistent scaling of planar MOSFET results in increase in transistor package density and performance of chip. However at nanometer regime , it has become a very challenging issue due to the increase in the short channel effects. In nanoscaled MOSFETs, the channel loses control from gate terminal due to potential at drain. Due to this, it is difficult to turn off MOSFET completely which inturn leads to leakage currents. Since cache memory occupies more area of processors, it is difficult to reduce leakage power in microprocessors. Double gate transistors have become replacement for MOS transistors at nano level. Since FINFETs have double gates, the leakage currents can be controlled effectively than planar MOSFET. In this paper, leakage currents of 6T & 7T-SRAM memory cell are analyzed using FINFETs at 22nm technology in hspice software

COMPACT MODELING OF DOUBLE AND TRI-GATE MOSFETs

2013 ◽  
Vol 22 (01) ◽  
pp. 1350004
Author(s):  
BENJAMIN IÑIGUEZ ◽  
ROMAIN RITZENTHALER ◽  
FRANÇOIS LIME
Keyword(s):  
Poisson’S Equation ◽  
Compact Modeling ◽  
Electrostatic Model ◽  
Short Channel Effects ◽  
Poisson's Equation ◽  
Short Channel ◽  
Channel Effects ◽  
Long Channel ◽  
2D And 3D ◽  
Tcad Simulations

This chapter presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Double-Gate MOSFETs (DG MOSFETs) and Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 1D Poisson's equation (in the case of DG MOSFETs) and the 2D Poisson's equation in the section perpendicular to the channel (in the case of TGFETs). Allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived from a 2D (in the case of DG MOSFETs) or a 3D (in the case of TGFETs) electrostatic analysis. The models were successfully compared with 2D and 3D TCAD simulations and, in some cases, experimental measurements. Short-channel effects, such as subthrehold slope degradation, threshold voltage roll-off and DIBL were accurately reproduced.

scholarly journals Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

2007 ◽  
Vol 33 (7) ◽  
pp. 605-611 ◽  
Author(s):  
D. Munteanu ◽  
J. L. Autran ◽  
X. Loussier ◽  
S. Harrison ◽  
R. Cerutti
Keyword(s):  
Compact Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Carrier Confinement ◽  
Channel Effects

The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

2006 ◽  
Vol 912 ◽  
Author(s):  
Bartek Pawlak ◽  
Ray Duffy ◽  
Emmanuel Augendre ◽  
Simone Severi ◽  
Tom Janssens ◽  
...  
Keyword(s):  
Rapid Thermal Annealing ◽  
Successful Implementation ◽  
Gate Length ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects ◽  
20 Nm ◽  
The Impact

AbstractAs extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

Short Channel Effects in MOS-Transistors

1981 ◽  
Vol 24 (2) ◽  
pp. 418-421 ◽  
Author(s):  
K Björkqvist ◽  
T Arnborg
Keyword(s):  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Channel Effects

Compact Modeling of Capacitance Based 14 nm Triple Gate FinFET Using Verilog-A

2020 ◽  
Vol 17 (9) ◽  
pp. 4553-4558
Author(s):  
N. Anjani Devi ◽  
T. Lokesh ◽  
H. S. P. Tejomurthy ◽  
Sreenivasa Rao Ijjada
Keyword(s):  
Cmos Technology ◽  
Ring Oscillator ◽  
Compact Modeling ◽  
Short Channel Effects ◽  
Short Channel ◽  
Controlling Mechanism ◽  
Channel Effects ◽  
Scaling Process ◽  
Scripting Language ◽  
A Charge

Technology down scaling process divulges, the unveiled short channel effects (SCEs), which disrupts the behavior of bulk CMOS technology. In order to overcome these unveiled effects, the single gate controlling mechanism should be replaced with multiple gate mechanism to enhance the control of gate over the conducting channel. FinFET is a promising technology, which provides efficient gate controlling over the channel by multiple gates. Some of the multi gate FinFET devices are Double gate FinFET (DG-FinFET), Triple gate FinFET (TG-FinFET). In this paper, a charge based capacitance model has been proposed for modeling of TG-FinFET. The behavior and structure of the proposed device has been described in Verilog-A scripting language. IV characteristic of the proposed device has been observed, a three stage ring oscillator circuit is implemented with the proposed device to generate 1 GHz signal for testing purpose.

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