scholarly journals Leakage Current Analysis of 6T & 7T-SRAM using FINFETs at 22nm Technology

2019 ◽  
Vol 8 (12) ◽  
pp. 2983-2986
Keyword(s):  
Memory Cell ◽  
Leakage Power ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Current Analysis ◽  
Leakage Currents ◽  
Short Channel ◽  
Channel Effects ◽  
Package Density ◽  
And Performance

Persistent scaling of planar MOSFET results in increase in transistor package density and performance of chip. However at nanometer regime , it has become a very challenging issue due to the increase in the short channel effects. In nanoscaled MOSFETs, the channel loses control from gate terminal due to potential at drain. Due to this, it is difficult to turn off MOSFET completely which inturn leads to leakage currents. Since cache memory occupies more area of processors, it is difficult to reduce leakage power in microprocessors. Double gate transistors have become replacement for MOS transistors at nano level. Since FINFETs have double gates, the leakage currents can be controlled effectively than planar MOSFET. In this paper, leakage currents of 6T & 7T-SRAM memory cell are analyzed using FINFETs at 22nm technology in hspice software

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

2019 ◽  
Vol 14 (12) ◽  
pp. 1672-1679 ◽  
Author(s):  
Ningombam Ajit Kumar ◽  
Aheibam Dinamani Singh ◽  
Nameirakpam Basanta Singh
Keyword(s):  
Surface Potential ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Parabolic Approximation ◽  
Short Channel ◽  
Channel Characteristic ◽  
Channel Effects ◽  
And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

2006 ◽  
Vol 912 ◽  
Author(s):  
Simone Severi ◽  
Emmanuel Augendre ◽  
Bartek Pawlak ◽  
Pierre Eyben ◽  
Taiji Noda ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Laser Annealing ◽  
Short Channel Effects ◽  
Short Channel ◽  
Spacer Length ◽  
Partial Dissolution ◽  
Channel Effects ◽  
Laser Anneal ◽  
And Performance ◽  
Nmos Transistors

AbstractThe advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

Transient Annealing of Boron Implanted Devices

1983 ◽  
Vol 23 ◽  
Author(s):  
S. R. Wilson ◽  
W. M. Paulson ◽  
C. J. Varker ◽  
A. Lowe ◽  
R. B. Gregory ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Ring Oscillators ◽  
Short Channel Effects ◽  
Leakage Currents ◽  
Short Channel ◽  
Low Leakage ◽  
Channel Effects ◽  
Recombination Lifetimes ◽  
Implanted Devices ◽  
Temperature Furnace

ABSTRACTShallow-junction semiconductor devices have been fabricated using ion implantation and transient annealing with a Varian IA-200 isothermal annealer. Boron implanted diodes, npn bipolar transistors and CMOS ring oscillators have been fabricated and are compared to furnace annealed devices. Boron implanted diodes have been annealed with the RIA and yield acceptably low leakage currents, comparable to furnace annealed devices. The RIA devices have recombination lifetimes of ∼10 μsec. The bipolar transistors subjected to a transient anneal have good base-collector and emitterbase junctions as well as gains of ∼100 in good agreement with the design of the device. MOSFETs and CMOS ring oscillators were fabricated using self-aligned polysilicon gates. The transient annealed devices were equal or superior to devices which were furnace annealed at 800°C for 10 min. The low temperature furnace anneal was necessary to minimize short channel effects. The transient anneal resulted in ring oscillators which were a factor of two faster than furnace samples that were annealed.

Modeling of $V_{\rm th}$ Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects

2008 ◽  
Vol 55 (4) ◽  
pp. 1020-1026 ◽  
Author(s):  
Sang-Goo Jung ◽  
Keun-Woo Lee ◽  
Ki-Seog Kim ◽  
Seung-Woo Shin ◽  
Seaung-Suk Lee ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Nand Flash ◽  
Short Channel Effects ◽  
Nand Flash Memory ◽  
Short Channel ◽  
Channel Effects ◽  
Flash Memory Cell

The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

2006 ◽  
Vol 912 ◽  
Author(s):  
Bartek Pawlak ◽  
Ray Duffy ◽  
Emmanuel Augendre ◽  
Simone Severi ◽  
Tom Janssens ◽  
...  
Keyword(s):  
Rapid Thermal Annealing ◽  
Successful Implementation ◽  
Gate Length ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects ◽  
20 Nm ◽  
The Impact

AbstractAs extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

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