Constant-current contour plot for the description of short-channel effects of MOS transistors

1986 ◽  
Vol 33 (10) ◽  
pp. 1619-1621 ◽  
Author(s):  
Choong-Ki Kim ◽  
S. Goodwin-Johansson ◽  
D. Sharma
Keyword(s):  
Constant Current ◽  
Contour Plot ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Channel Effects

scholarly journals Leakage Current Analysis of 6T & 7T-SRAM using FINFETs at 22nm Technology

2019 ◽  
Vol 8 (12) ◽  
pp. 2983-2986
Keyword(s):  
Memory Cell ◽  
Leakage Power ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Current Analysis ◽  
Leakage Currents ◽  
Short Channel ◽  
Channel Effects ◽  
Package Density ◽  
And Performance

Persistent scaling of planar MOSFET results in increase in transistor package density and performance of chip. However at nanometer regime , it has become a very challenging issue due to the increase in the short channel effects. In nanoscaled MOSFETs, the channel loses control from gate terminal due to potential at drain. Due to this, it is difficult to turn off MOSFET completely which inturn leads to leakage currents. Since cache memory occupies more area of processors, it is difficult to reduce leakage power in microprocessors. Double gate transistors have become replacement for MOS transistors at nano level. Since FINFETs have double gates, the leakage currents can be controlled effectively than planar MOSFET. In this paper, leakage currents of 6T & 7T-SRAM memory cell are analyzed using FINFETs at 22nm technology in hspice software

The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

2006 ◽  
Vol 912 ◽  
Author(s):  
Bartek Pawlak ◽  
Ray Duffy ◽  
Emmanuel Augendre ◽  
Simone Severi ◽  
Tom Janssens ◽  
...  
Keyword(s):  
Rapid Thermal Annealing ◽  
Successful Implementation ◽  
Gate Length ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects ◽  
20 Nm ◽  
The Impact

AbstractAs extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

Short Channel Effects in MOS-Transistors

1981 ◽  
Vol 24 (2) ◽  
pp. 418-421 ◽  
Author(s):  
K Björkqvist ◽  
T Arnborg
Keyword(s):  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Channel Effects

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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