The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

2006 ◽  
Vol 912 ◽  
Author(s):  
Bartek Pawlak ◽  
Ray Duffy ◽  
Emmanuel Augendre ◽  
Simone Severi ◽  
Tom Janssens ◽  
...  
Keyword(s):  
Rapid Thermal Annealing ◽  
Successful Implementation ◽  
Gate Length ◽  
Short Channel Effects ◽  
Mos Transistors ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects ◽  
20 Nm ◽  
The Impact

AbstractAs extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

2012 ◽  
Vol 67 (6-7) ◽  
pp. 317-326 ◽  
Author(s):  
Alireza Heidari ◽  
Niloofar Heidari ◽  
Foad Khademi Jahromi ◽  
Roozbeh Amiri ◽  
Mohammadali Ghorbani
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Open Boundary ◽  
Double Gate ◽  
Short Channel Effects ◽  
Drain Voltage ◽  
Short Channel ◽  
Channel Effects ◽  
The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

scholarly journals Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

2017 ◽  
Vol 7 (4) ◽  
pp. 1899
Author(s):  
Mohammed Khaouani ◽  
Ahlam Guen-Bouazza
Keyword(s):  
Single Channel ◽  
Numerical Study ◽  
Drain Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel One ◽  
A Value ◽  
Device Structures ◽  
Channel Effects ◽  
The Impact

<p>Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number<em> </em>on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10<sup>4</sup>, while our four channels GAA MOSFET showed a value of 10<sup>3</sup>. In addition, a low value of drain induced barrier lowering<em> (DIBL) of </em>60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.</p>

50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.

2011 ◽  
Vol 1282 ◽  
Author(s):  
David A. J. Moran ◽  
Donald A. MacLaren ◽  
Samuele Porro ◽  
Richard Hill ◽  
Helen McLelland ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Transmission Electron ◽  
Channel Effects ◽  
Physical And Chemical ◽  
Electron Energy Loss

ABSTRACTHydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.

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