Smart-power device model coupling compact, distributed and logic level description

2007 ◽  
Author(s):  
Alberto Castellazzi ◽  
Mauro Ciappa
Keyword(s):  
Power Device ◽  
Model Coupling ◽  
Smart Power ◽  
Device Model ◽  
Logic Level

Safety P-Cycle Protection Mechanism for Smart Power Device

2013 ◽  
Vol 804 ◽  
pp. 228-232
Author(s):  
Bin Li ◽  
Ke Qing Xiong ◽  
Yi Sun ◽  
Bing Qi
Keyword(s):  
High Efficiency ◽  
Cooling System ◽  
Power Converter ◽  
Power Device ◽  
Water Cooling ◽  
Power Module ◽  
Smart Power ◽  
Protection Mechanism ◽  
Power Modules ◽  
P Cycle

Power converter with full closed loop water cooling system, works not only use water cooling characteristics of high efficiency, but also the electricity, and reducing the volume to prevent contamination. In this paper, we proposed a novel p-cycle safety protection approach that can provide rapid cycling radiating, and can restore the status of power device. For power cabinet composition, IGBT power modules and reactors is primarary radiating components, in which IGBT power modules that used for water cooling solution is modeled as the cooled automobile engine cooling system using cycling design principle. Besides, machine side and the network side of the power module is installed in separate cabinet to improve the tightness of the entire cabinet, in order to resist sandstorms.

scholarly journals 4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 684 ◽  
Author(s):  
Xiaoxue Yan ◽  
Lin Liang ◽  
Xinyuan Huang ◽  
Heqing Zhong ◽  
Zewei Yang
Keyword(s):  
Silicon Carbide ◽  
Recovery Process ◽  
Wide Bandgap ◽  
Pulsed Power ◽  
Power Device ◽  
Structure Parameters ◽  
Electrical Characteristics ◽  
Device Model ◽  
Wide Bandgap Material ◽  
First Time

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes

2013 ◽  
Vol 740-742 ◽  
pp. 1093-1097
Author(s):  
Makiko Hirano ◽  
Tsuyoshi Funaki
Keyword(s):  
Schottky Barrier ◽  
Equivalent Circuit ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Power Device ◽  
Circuit Modeling ◽  
Device Model ◽  
Equivalent Circuit Modeling ◽  
Simulation Results ◽  
Switching Characteristics

Circuit simulation is of assistance to design and evaluate a power conversion circuit. A compact and accurate power device model is indispensable for obtaining appropriate circuit simulation results. This paper studies the compact equivalent circuit modeling of SiC Schottky Barrier diode (SiCSBD) and evaluates the developed model in turn-off switching operation. Two SiCSBDs having different specification are modeled and evaluated in this paper. The results show that the switching characteristics of SiCSBDs can be modeled with the equivalent circuit, whose configurations and parameters are identified from static I-V and C-V characteristics.

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