InP heterostructure photonic crystal waveguide fabricated by high-aspect-ratio ICP etching

2013 ◽  
Author(s):  
Kaiyu Cui ◽  
Yongzhuo Li ◽  
Xue Feng ◽  
Fang Liu ◽  
Yidong Huang ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Photonic Crystal Waveguide ◽  
Icp Etching

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Simulation and Fabrication of Novel Polymeric Tunneling Sensor by Hot Embossing Technique

2002 ◽  
Author(s):  
Tianhong Cui ◽  
Kody Varahramyan ◽  
Yongjun Zhao ◽  
Jing Wang
Keyword(s):  
Aspect Ratio ◽  
Silicon Wafer ◽  
Optimum Design ◽  
High Aspect Ratio ◽  
Hot Embossing ◽  
Anodic Bonding ◽  
Glass Disk ◽  
Icp Etching ◽  
Sensor Platform ◽  
Polymer Microfabrication

This paper reports the simulation and fabrication of novel polymer-based tunneling sensors by hot embossing technique, one of the advanced polymer microfabrication technologies. ANSYS is the software tools used to simulate the mechanical microstructures of the polymer tunneling sensors. Following the optimum design of the sensors, the mold inserts of hot embossing are fabricated by anodic bonding of glass disk 5 mm think and silicon wafer, with high-aspect-ratio microstructures by ICP etching. Main structures of polymer-based tunneling sensors are hot embossed on PMMA, followed by plastic bonding to form lateral tunneling sensor platform.

Hot embossing of photonic crystal polymer structures with a high aspect ratio

2011 ◽  
Vol 21 (2) ◽  
pp. 025017 ◽  
Author(s):  
Mauno Schelb ◽  
Christoph Vannahme ◽  
Alexander Kolew ◽  
Timo Mappes
Keyword(s):  
Photonic Crystal ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Hot Embossing ◽  
Crystal Polymer

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

2010 ◽  
Vol 21 (13) ◽  
pp. 134014 ◽  
Author(s):  
Maïté Volatier ◽  
David Duchesne ◽  
Roberto Morandotti ◽  
Richard Arès ◽  
Vincent Aimez
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Icp Etching

Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling

2015 ◽  
Author(s):  
Karen M. Dowling ◽  
Ateeq J. Suria ◽  
Yoonjin Won ◽  
Ashwin Shankar ◽  
Hyoungsoon Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Hot Spot ◽  
Transfer Coefficients ◽  
Inductively Coupled ◽  
Heat Transfer Coefficients ◽  
Icp Etching ◽  
On Chip

High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that SiC-based microchannels used for localized cooling should have high aspect ratio features (above 8:1) to obtain heat transfer coefficients (300 to 600 kW/m2·K) required to obtain gallium nitride (GaN) device channel temperatures below 100°C. This work presents experimental results of microfabricating high aspect ratio microchannels in a 4H-SiC substrate using inductively coupled plasma (ICP) etching. Depths of 90 μm and 80 μm were achieved with a 5:1 and 12:1 aspect ratio, respectively. This microfabrication process will enable the integration of microchannels (backside features) with high-power density devices such as GaN-on-SiC based electronics, as well as other SiC-based microfluidic applications.

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