Design of a low-voltage instrumentation amplifier for enzyme-extended-gate field effect transistor based urea sensor application

2003 ◽  
Author(s):  
Wen-Yaw Chung ◽  
Mao-Hsiang Yeh ◽  
Jia-Chyi Chen ◽  
Shen-Kan Hsiung ◽  
D.G. Pijanowska ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Instrumentation Amplifier ◽  
Sensor Application ◽  
Effect Transistor

Local Flow Control Using a Field Effect Transistor

2006 ◽  
Author(s):  
Keisuke Horiuchi ◽  
Prashanta Dutta
Keyword(s):  
Zeta Potential ◽  
Flow Control ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Control Flow ◽  
Charge Condition ◽  
Lateral Direction ◽  
Local Flow ◽  
Effect Transistor

A field-effect transistor is developed on PDMS microchannel to control flow in microfluidic chips by modifying the surface charge condition. By applying a gate voltage to one side of the microchannel wall, zeta potential at that side is altered, while the zeta potential at the other side is maintained at the original value. This non-uniform zeta potential results in a secondary electroosmotic flow in lateral direction, which is used for flow control in microchannel geometries. The flow control is observed both quantitatively and qualitatively at relatively low voltage (less than 50 [V]), and this local flow control is primarily due to the leakage current through the interface between PDMS and glass layers. To verify the experimental results, a leakage capacitance model is introduced to estimate the modified zeta potential for the straight channel case, and excellent agreement is obtained between the predicted and experimental zeta potential results.

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs

2013 ◽  
Vol 740-742 ◽  
pp. 950-953
Author(s):  
Tomohiro Tamaki ◽  
Shinya Ishida ◽  
Yoshikazu Tomizawa ◽  
Hiroyuki Nakamura ◽  
Yasuhiro Shirai ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Maximum Load ◽  
Performance Comparison ◽  
Junction Temperature ◽  
Switching Performance ◽  
Operating Current ◽  
Effect Transistor

We compare the on-state and switching performance of a 600 V-class Hybrid SiC junction field effect transistor (HJT) and Si superjunction MOSFETs (SJ-MOSs), both of which are packaged in TO-3P full-mold package, as a function of operating frequency. The maximum load current is limited by the package power dissipation rating determined by the maximum junction temperature. Since the HJT is composed of a SiC JFET and a low voltage Si MOSFET, the allowable maximum junction temperature of the HJT is the same as that of SJ-MOSFETs, namely 150 °C. The experimental results show that the maximum operating current of the HJT is comparable to that of SJ-MOSs, but the EMI noise of the HJT is much suppressed due to lower dV/dt.

Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

2017 ◽  
Vol 2 (4) ◽  
pp. 045004 ◽  
Author(s):  
Geoffroy Houin ◽  
Frédéric Duez ◽  
Luc Garcia ◽  
Eugenio Cantatore ◽  
Lionel Hirsch ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Plastic Substrate ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Device Engineering

scholarly journals EFFECT OF FERRO ELECTRIC THICKNESS ON NEGATIVE CAPACITANCE FET (NCFET)

2021 ◽  
Vol 22 (1) ◽  
pp. 339-346
Author(s):  
Muhaimin Bin Mohd Hashim ◽  
AHM Zahirul ALAM ◽  
Naimah Binti Darmis
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
New Technology ◽  
Ferroelectric Material ◽  
Operating Voltage ◽  
Negative Capacitance ◽  
Channel Potential ◽  
Effect Transistor ◽  
The One

Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field Effect Transistor (NCFETis presented.  This paper shows the effect of ferroelectric material in MOSFET structure by replacing the insulator in the conventional MOSFET. It should be possible to obtain a steeper subthreshold swing (SS) compared to the one without a ferroelectric material layer, thus breaking the fundamental limit on the operating voltage of MOSFET.  27% of the subthreshold slope reduction is observed by introducing ferroelectric in the dielectric layer compared to the conventional MOSFETs. Hence, the power dissipation in MOSFET can be mitigated and shine to a new technology of a low voltage/low power transistor operation. ABSTRAK: Transistor Kesan Medan Konvensional (FET) terkenal memerlukan sekurang-kurangnya 60mV / dekad pada 300K perubahan pada saluran yang berpotensi untuk mengubah arus dengan faktor 10. Oleh kerana itu, 60mV / dekad menjadi hambatan transistor hari ini. Kajian komprehensif mengenai Negative Capacitance Field Effect Transistor (NCFETis dikemukakan. Makalah ini menunjukkan kesan bahan ferroelektrik dalam struktur MOSFET dengan mengganti penebat dalam MOSFET konvensional. Sebaiknya dapatkan swing swing subthreshold (SS) yang lebih curam berbanding dengan satu tanpa lapisan bahan ferroelektrik, sehingga melanggar had asas pada voltan operasi MOSFET. 27% pengurangan cerun subthreshold diperhatikan dengan memperkenalkan ferroelektrik di lapisan dielektrik berbanding dengan MOSFET konvensional. Oleh itu, pelesapan daya dalam MOSFET dapat dikurangkan dan bersinar dengan teknologi baru operasi transistor voltan rendah / kuasa rendah.

scholarly journals Detection of 1,5-anhydroglucitol as a Biomarker for Diabetes Using an Organic Field-Effect Transistor-Based Biosensor

Technologies ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 77 ◽  
Author(s):  
Hiroyuki Furusawa ◽  
Yusuke Ichimura ◽  
Kuniaki Nagamine ◽  
Rei Shiwaku ◽  
Hiroyuki Matsui ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Voltage ◽  
Point Of Care ◽  
Low Cost ◽  
Transfer Characteristic ◽  
Organic Field Effect Transistor ◽  
Pyranose Oxidase ◽  
Effect Transistor ◽  
Inkjet Printing Technology

Sensor devices that can be fabricated on a flexible plastic film produced at a low cost using inkjet-printing technology are suitable for point-of-care applications. An organic field-effect transistor (OFET)-based biosensor can function as a potentiometric electrochemical sensor. To investigate the usefulness of an OFET-based biosensor, we demonstrated the detection of 1,5-anhydroglucitol (1,5-AG) and glucose, which are monosaccharides used as biomarkers of diabetes. An OFET-based biosensor combined with a Prussian blue (PB) electrode, modified with glucose oxidase (GOx) or pyranose oxidase (POx), was utilized for the detection of the monosaccharides. When the GOx- or POx-PB electrode was immersed in glucose solution at the determined concentration, shifts in the low-voltage direction of transfer characteristic curves of the OFET were observed to be dependent on the glucose concentrations in the range of 0–10 mM. For 1,5-AG, the curve shifts were observed only with the POx-PB electrode. Detection of glucose and 1,5-AG was achieved in a substrate-specific manner of the enzymes on the printed OFET-biosensor. Although further improvements are required in the detection concentration range, the plastic-filmOFET-biosensors will enable the measurement of not only diabetes biomarkers but also various other biomarkers.

Sign in / Sign up

Export Citation Format

Share Document