Impact of argon-ambient annealing in hafnium oxide Resistive Random Access Memory

2014 ◽  
Author(s):  
Jihan O. Capulong ◽  
Benjamin D. Briggs ◽  
Nathaniel C. Cady
Keyword(s):  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

2019 ◽  
Vol 66 (7) ◽  
pp. 1715-1718 ◽  
Author(s):  
Stefan Petzold ◽  
S. U. Sharath ◽  
Jonas Lemke ◽  
Erwin Hildebrandt ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Heavy Ion ◽  
Access Memory ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation

scholarly journals Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11585-11590 ◽  
Author(s):  
Cong Ye ◽  
Jia-Ji Wu ◽  
Chih-Hung Pan ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Supercritical Fluid ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Ito Electrode

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

scholarly journals Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

2019 ◽  
Vol 5 (10) ◽  
pp. 1900484 ◽  
Author(s):  
Stefan Petzold ◽  
Alexander Zintler ◽  
Robert Eilhardt ◽  
Eszter Piros ◽  
Nico Kaiser ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Effects of Oxygen Partial Pressure on the Sputtered Hafnium Oxide Thin Films for Resistive Random-Access Memory

2012 ◽  
Vol 529 ◽  
pp. 49-52 ◽  
Author(s):  
Zhong Liang Xie ◽  
Yun Feng Lai
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Flat Band ◽  
Flow Ratio ◽  
Flat Band Voltage ◽  
Access Memory

Hafnium oxide thin films were deposited on silicon substrates by RF reactive magnetron sputtering. The effects of oxygen partial pressure, tuned by the O2/Ar flow ratio, on the microstructure and electrical properties were characterized. All HfOx thin films exhibit monoclinic phases. As the increase of O2/Ar flow ratio from 0.08 to 0.33, the crystallinity is improved accompanied with the decreases of flat band voltage and leakage current density. However, when the O2/Ar flow ratio further increases to 0.5, the crystallinity becomes worse with the increase of flat band voltage and leakage current. The HfOx based resistive random-access memory (RRAM) has been fabricated and its storage properties were also investigated.

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