Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation
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A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).
2015 ◽
Vol 36
(11)
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pp. 1138-1141
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2016 ◽
Vol 63
(11)
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pp. 4288-4294
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2017 ◽
Vol 9
(3)
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pp. 3149-3155
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2016 ◽
Vol 63
(12)
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pp. 4769-4775
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2016 ◽
Vol 37
(5)
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pp. 584-587
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2019 ◽
Vol 66
(3)
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pp. 1276-1280
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2014 ◽
Vol 35
(6)
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pp. 630-632
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