Linearly Scalable Cost-efficient Parallel Method for High-power Wide-bandgap-based Converters

2021 ◽  
Author(s):  
Shang Gao ◽  
Zheyu Zhang
Keyword(s):  
High Power ◽  
Wide Bandgap ◽  
Parallel Method ◽  
Cost Efficient

scholarly journals Interleaved, Switched Inductor and High-Gain Wide Bandgap Based Boost Converter Proposal

Energies ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 800
Author(s):  
David Marroqui ◽  
Ausias Garrigós ◽  
Cristian Torres ◽  
Carlos Orts ◽  
Jose M. Blanes ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Low Voltage ◽  
High Gain ◽  
Wide Bandgap ◽  
High Power Density ◽  
Boost Converters ◽  
Proposal A ◽  
Current Ripples ◽  
Current Ripple

Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In this work is proposed a step-up converter that brings together the characteristics of high gain, low ripple, and high-power density. From the converter proposal, a mathematical analysis of its operation is first performed, including its static transfer function, stress of components, and voltage and current ripples. Furthermore, it provides a design example for an application of Vin = 48 V to Vo = 270 V and 500 W. For its implementation, two different wide bandgap (WBG) semiconductor models have been used, hybrid GaN cascodes and SiC MOSFETs. Finally, the experimental results of the produced prototypes are shown, and the results are discussed.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

A wide-bandgap polymer based on the alkylphenyl-substituted benzo[1,2-b:4,5-b′]dithiophene unit with high power conversion efficiency of over 11%

2018 ◽  
Vol 6 (34) ◽  
pp. 16529-16536 ◽  
Author(s):  
Xia Guo ◽  
Wanbin Li ◽  
Huan Guo ◽  
Bing Guo ◽  
Jingnan Wu ◽  
...  
Keyword(s):  
Power Conversion Efficiency ◽  
Layer Thickness ◽  
High Power ◽  
Conjugated Polymer ◽  
Power Conversion ◽  
Wide Bandgap ◽  
Active Layer Thickness ◽  
Large Area ◽  
High Power Conversion Efficiency ◽  
Wide Bandgap Polymer

A novel wide bandgap polymer PTZP with Eoptg of 2.01 eV was designed and synthesized. PSCs based on PTZP exhibited high PCE of 11.8%. PCEs of over 10% were obtained with an active layer thickness of 200 nm or an area of 0.81 cm2. PTZP was shown to be a promising conjugated polymer for the fabrication of efficient large area PSCs.

193nm high power lasers for the wide bandgap material processing

2017 ◽  
Author(s):  
Junichi Fujimoto ◽  
Masakazu Kobayashi ◽  
Koji Kakizaki ◽  
Hiroaki Oizumi ◽  
Toshio Mimura ◽  
...  
Keyword(s):  
Material Processing ◽  
High Power ◽  
Wide Bandgap ◽  
High Power Lasers ◽  
Wide Bandgap Material

Applications of high-power laser technology to wide-bandgap nitride semiconductor processing

2002 ◽  
Author(s):  
Petr G. Eliseev ◽  
Andrei A. Ionin ◽  
Yurii M. Klimachev ◽  
Dmitrii V. Sinitsyn ◽  
Jinhyun Lee ◽  
...  
Keyword(s):  
High Power ◽  
Wide Bandgap ◽  
High Power Laser ◽  
Semiconductor Processing ◽  
Power Laser ◽  
Laser Technology ◽  
Nitride Semiconductor

scholarly journals Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Science ◽  
2020 ◽  
Vol 367 (6477) ◽  
pp. 555-559 ◽  
Author(s):  
Ke Chen ◽  
Bai Song ◽  
Navaneetha K. Ravichandran ◽  
Qiye Zheng ◽  
Xi Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
High Power ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Wide Bandgap ◽  
Boron Isotopes ◽  
Fundamental Interest ◽  
Boron Phosphide

Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

Sign in / Sign up

Export Citation Format

Share Document