High-speed wet etching of through silicon vias (TSVs) in micro- and nanoscale

2014 ◽  
Author(s):  
Liyi Li ◽  
Ching-Ping Wong
Keyword(s):  
High Speed ◽  
Wet Etching ◽  
Through Silicon Vias ◽  
Silicon Vias

Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

2004 ◽  
Author(s):  
Ronald Hon ◽  
Shawn X. D. Zhang ◽  
S. W. Ricky Lee
Keyword(s):  
Reactive Ion Etching ◽  
Three Dimensional ◽  
Laser Drilling ◽  
Wet Etching ◽  
Ion Etching ◽  
Through Silicon Vias ◽  
Deep Reactive Ion Etching ◽  
Definition Of ◽  
Silicon Vias ◽  
Wafer Thinning

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and time needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.

High Frequency Signal Propagation in Through Silicon Vias

2012 ◽  
Vol 2012 (1) ◽  
pp. 000239-000243
Author(s):  
Srinidhi Raghavan Narasimhan ◽  
A. Ege Engin
Keyword(s):  
Wave Propagation ◽  
High Frequency ◽  
High Speed ◽  
Signal Propagation ◽  
Successful Implementation ◽  
High Frequency Signal ◽  
3D Ic ◽  
Through Silicon Vias ◽  
Integration Technology ◽  
Silicon Vias

The 3D IC integration technology and silicon interposers rely on through silicon vias (TSVs) for vertical interconnections. Hence, the medium carrying high frequency signals is lossy silicon (Si). Fundamental understanding of wave propagation through TSVs is essential for successful implementation of 3D IC integration technology as well as for the development of Si interposers at RF/microwave frequencies. The focus of this paper is characterization and modelling of TSVs and Si to explore high speed signal propagation through the lossy Si medium. To understand better the physical significance of the TSV, we will establish a framework for wave propagation through TSVs based on dielectric quasi-TEM, skin effect, and slow-wave modes similar to MIS micro-strip lines. For validation of the existence of these modes, full wave simulation results will be compared with simpler two dimensional transmission line simulators.

Development of a High-Speed Depth Measuring Machine for through Silicon Vias on a 300 mm Silicon Wafer

2017 ◽  
Vol 34 (5) ◽  
pp. 311-314
Author(s):  
Sunchun Hong ◽  
Seokmin Yun ◽  
Benjamin Woo ◽  
Jungjae Park ◽  
Jonghan Jin
Keyword(s):  
Silicon Wafer ◽  
High Speed ◽  
Through Silicon Vias ◽  
Measuring Machine ◽  
Silicon Vias
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