Modelling and Analysis of Single Node E-skin Piezoresistive Pressure Sensor Simulation Results

2018 ◽  
Author(s):  
Riyaz Ali Shaik ◽  
Elizabeth Rufus
Keyword(s):  
Pressure Sensor ◽  
Single Node ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results

Investigation of Thermal Effect of Packaged CMOS Compatible Pressure Sensor

Manufacturing ◽  
2002 ◽  
Author(s):  
Chih-Tang Peng ◽  
Ji-Cheng Lin ◽  
Chun-Te Lin ◽  
Kuo-Ning Chiang
Keyword(s):  
Pressure Sensor ◽  
Output Voltage ◽  
Experimental Validation ◽  
Experimental Result ◽  
Pressure Loading ◽  
Simulation Data ◽  
Sensor Performance ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Stress Buffer

In this study, a packaged silicon base piezoresistive pressure sensor with thermal stress buffer is designed, fabricated, and measured. A finite element method (FEM) is adopted for design and experimental validation of the sensor performance. Thermal and pressure loading on the sensor is applied to make a comparison between sensor experimental and simulation results. Furthermore, a method that transfers simulation stress data into output voltage is proposed in this study, the results indicate that the experimental result coincides with simulation data.

Design and Simulation of Piezoresistive Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 411-414 ◽  
pp. 1552-1558
Author(s):  
Guan Rong Tang ◽  
Si Di ◽  
Xin Xu ◽  
Qiu Lan Chen
Keyword(s):  
Optimum Design ◽  
Deep Water ◽  
Pressure Sensor ◽  
Measurement Range ◽  
Comsol Multiphysics ◽  
Good Linearity ◽  
Piezoresistive Pressure Sensor ◽  
Simulation Results ◽  
Output Characteristics

This paper presents the design and simulation of a piezoresistive pressure sensor with wide operation range (up to the pressure of 1000 m-deep water). Structural and electrical simulations were carried out using COMSOL Multiphysics 4.3. The dimension of the membrane, and the geometry and placement of piezoresistors, were optimized through structural simulations. Electrical simulations were used to evaluate the performance of selected sensors. The output characteristics revealed good linearity throughout the measurement range with sensitivities of 0.4500~0.8964 mV/V/MPa. The optimum design of sensor was determined according to the simulation results.

scholarly journals Simulation and Nonlinearity Optimization of a High-Pressure Sensor

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4419
Author(s):  
Ting Li ◽  
Haiping Shang ◽  
Weibing Wang
Keyword(s):  
High Pressure ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Original Model ◽  
Ansys Software ◽  
Nonlinear Error ◽  
Sensor Model ◽  
Optimized Model ◽  
Simulation Results ◽  
Better Than

A pressure sensor in the range of 0–120 MPa with a square diaphragm was designed and fabricated, which was isolated by the oil-filled package. The nonlinearity of the device without circuit compensation is better than 0.4%, and the accuracy is 0.43%. This sensor model was simulated by ANSYS software. Based on this model, we simulated the output voltage and nonlinearity when piezoresistors locations change. The simulation results showed that as the stress of the longitudinal resistor (RL) was increased compared to the transverse resistor (RT), the nonlinear error of the pressure sensor would first decrease to about 0 and then increase. The theoretical calculation and mathematical fitting were given to this phenomenon. Based on this discovery, a method for optimizing the nonlinearity of high-pressure sensors while ensuring the maximum sensitivity was proposed. In the simulation, the output of the optimized model had a significant improvement over the original model, and the nonlinear error significantly decreased from 0.106% to 0.0000713%.

Design and Simulation of Pressure Sensor for Ocean Depth Measurements

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Output Voltage ◽  
Pressure Sensors ◽  
Micro Electro Mechanical System ◽  
Constant Thickness ◽  
Piezoresistive Pressure Sensor ◽  
Wide Pressure Range ◽  
Processing Techniques ◽  
Wide Pressure

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.

Study and Analysis of MEMS Pressure Sensor Based on Applied Mechanics

2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing
Keyword(s):  
Finite Element Analysis ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Scientific Basis ◽  
Sensor Chip ◽  
Applied Mechanics ◽  
Beam Structure ◽  
Element Analysis ◽  
Sensor Development ◽  
Piezoresistive Pressure Sensor

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

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