Analysis on Fully Depleted Negative Capacitance Field-Effect Transistor (NCFET) Based on Electrostatic Potential Difference

2019 ◽  
Author(s):  
Kitae Lee ◽  
Junil Lee ◽  
Sihyun Kim ◽  
Soyoun Kim ◽  
Munhyeon Kim ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Potential Difference ◽  
Negative Capacitance ◽  
Fully Depleted ◽  
Effect Transistor

Intrinsic switching in Si-doped HfO2: A study of Curie–Weiss law and its implications for negative capacitance field-effect transistor

2021 ◽  
Vol 118 (19) ◽  
pp. 192904
Author(s):  
Carlotta Gastaldi ◽  
Matteo Cavalieri ◽  
Ali Saeidi ◽  
Eamon O'Connor ◽  
Sadegh Kamaei ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Capacitance ◽  
Si Doped ◽  
Effect Transistor

scholarly journals Standard CMOS Fabrication of a Sensitive Fully Depleted Electrolyte-Insulator-Semiconductor Field Effect Transistor for Biosensor Applications

Sensors ◽  
2009 ◽  
Vol 9 (6) ◽  
pp. 4366-4379 ◽  
Author(s):  
Gil Shalev ◽  
Ariel Cohen ◽  
Amihood Doron ◽  
Andrew Machauf ◽  
Moran Horesh ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Fully Depleted ◽  
Effect Transistor ◽  
Biosensor Applications
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