Fabrication on n-Ga2O3/p-GaN diode by wet-etching lift-off and transfer-print

Author(s):  
Yang Liu ◽  
Lai Wang ◽  
Yuantao Zhang ◽  
Xin Dong ◽  
Zhibiao Hao ◽  
...  
Keyword(s):  
2010 ◽  
Vol 24 (15n16) ◽  
pp. 2639-2644 ◽  
Author(s):  
W. B. PARK ◽  
J. H. CHOI ◽  
C. W. PARK ◽  
G. M. KIM ◽  
H. S. SHIN ◽  
...  

In this study, the mass fabrication of microelectrode tools for microelectrochemical machining (MECM) was studied using microfabrication processes. The cantilever type geometry of microelectrodes was defined by photolithography processes, and metal patterns were made for electrical contacts. Various fabrication processes were studied for the fabrication of microelectrode tools, such as wet etching, lift-off, and electroforming for metal layer patterning. MECM test results showed feasibility of the fabricated electrode tools. The microfabricated electrodes can be used as micromachining tools for various electrical micromachining of steel mold and parts of microdevices.


2017 ◽  
Vol 254 (8) ◽  
pp. 1770241 ◽  
Author(s):  
Chris Youtsey ◽  
Robert McCarthy ◽  
Rekha Reddy ◽  
Kamran Forghani ◽  
Andy Xie ◽  
...  
Keyword(s):  

2003 ◽  
Vol 783 ◽  
Author(s):  
Alex Katsnelson ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Serge Oktyabrsky

ABSTRACTA method for hybrid integration of III-V optoelectronic components on Si substrate using BCB was demonstrated. The method included bonding, selective wet etching of the GaAs substrate, components separation by wet etching, two-level metallization and lateral oxidation to form optical apertures. Simulations of thermal behavior and mechanical stresses of this integration scheme were performed using finite element analysis, which revealed adequate heat dissipation. Simulations show that this bonding protocol allows reduction of overheating and mechanical stress that enhances the optoelectronic device performance and increases reliability. Electro-luminescence spectrum, I-V and P-T characteristics were measured and compared with a reference homoepitaxial structure and the results of the simulations. Measured thermal impedance was found to be less then two times higher than that for the devices on a host GaAs wafer. Novel method of substrate removal named oxidation lift-off was proposed and demonstrated. This process allows to release a VCSEL structure with epitaxial DBRs and separate individual components on Si, reduces the number of process steps and eventually reduces cost of the fabricated devices. Au/Ge alloy was used for the metal bonding of the test oxidation lift-off structure. Substrate removal, device separation, bonding and formation of the oxide apertures were done within a single processing step.


2021 ◽  
Vol 42 (4) ◽  
pp. 509-512
Author(s):  
Yang Liu ◽  
Lai Wang ◽  
Yuantao Zhang ◽  
Xin Dong ◽  
Xiankai Sun ◽  
...  
Keyword(s):  

2017 ◽  
Vol 254 (8) ◽  
pp. 1600774 ◽  
Author(s):  
Chris Youtsey ◽  
Robert McCarthy ◽  
Rekha Reddy ◽  
Kamran Forghani ◽  
Andy Xie ◽  
...  
Keyword(s):  

2012 ◽  
Vol 24 (11) ◽  
pp. 2613-2617
Author(s):  
刘仁臣 Liu Renchen ◽  
吴永刚 Wu Yonggang ◽  
夏子奂 Xia Zihuan ◽  
王振华 Wang Zhenhua ◽  
唐平林 Tang Pinglin ◽  
...  
Keyword(s):  

2004 ◽  
Vol 43 (No. 5A) ◽  
pp. L637-L639 ◽  
Author(s):  
Yan Gao ◽  
Tetsuo Fujii ◽  
Rajat Sharma ◽  
Kenji Fujito ◽  
Steven P. Denbaars ◽  
...  

2012 ◽  
Vol 48 (4) ◽  
pp. 1601-1604 ◽  
Author(s):  
A. Garcfa-Arribas ◽  
E. Fernandez ◽  
A. Barrainkua ◽  
A. V. Svalov ◽  
G. V. Kurlyandskaya ◽  
...  

2017 ◽  
Vol 8 ◽  
pp. 2648-2661 ◽  
Author(s):  
Liane S Slaughter ◽  
Kevin M Cheung ◽  
Sami Kaappa ◽  
Huan H Cao ◽  
Qing Yang ◽  
...  

The supported monolayer of Au that accompanies alkanethiolate molecules removed by polymer stamps during chemical lift-off lithography is a scarcely studied hybrid material. We show that these Au–alkanethiolate layers on poly(dimethylsiloxane) (PDMS) are transparent, functional, hybrid interfaces that can be patterned over nanometer, micrometer, and millimeter length scales. Unlike other ultrathin Au films and nanoparticles, lifted-off Au–alkanethiolate thin films lack a measurable optical signature. We therefore devised fabrication, characterization, and simulation strategies by which to interrogate the nanoscale structure, chemical functionality, stoichiometry, and spectral signature of the supported Au–thiolate layers. The patterning of these layers laterally encodes their functionality, as demonstrated by a fluorescence-based approach that relies on dye-labeled complementary DNA hybridization. Supported thin Au films can be patterned via features on PDMS stamps (controlled contact), using patterned Au substrates prior to lift-off (e.g., selective wet etching), or by patterning alkanethiols on Au substrates to be reactive in selected regions but not others (controlled reactivity). In all cases, the regions containing Au–alkanethiolate layers have a sub-nanometer apparent height, which was found to be consistent with molecular dynamics simulations that predicted the removal of no more than 1.5 Au atoms per thiol, thus presenting a monolayer-like structure.


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