scholarly journals Wafer-scale epitaxial lift-off of GaN using bandgap-selective photoenhanced wet etching

2017 ◽  
Vol 254 (8) ◽  
pp. 1600774 ◽  
Author(s):  
Chris Youtsey ◽  
Robert McCarthy ◽  
Rekha Reddy ◽  
Kamran Forghani ◽  
Andy Xie ◽  
...  
Keyword(s):  
2017 ◽  
Vol 254 (8) ◽  
pp. 1770241 ◽  
Author(s):  
Chris Youtsey ◽  
Robert McCarthy ◽  
Rekha Reddy ◽  
Kamran Forghani ◽  
Andy Xie ◽  
...  
Keyword(s):  

Author(s):  
Yang Liu ◽  
Lai Wang ◽  
Yuantao Zhang ◽  
Xin Dong ◽  
Zhibiao Hao ◽  
...  
Keyword(s):  

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2639-2644 ◽  
Author(s):  
W. B. PARK ◽  
J. H. CHOI ◽  
C. W. PARK ◽  
G. M. KIM ◽  
H. S. SHIN ◽  
...  

In this study, the mass fabrication of microelectrode tools for microelectrochemical machining (MECM) was studied using microfabrication processes. The cantilever type geometry of microelectrodes was defined by photolithography processes, and metal patterns were made for electrical contacts. Various fabrication processes were studied for the fabrication of microelectrode tools, such as wet etching, lift-off, and electroforming for metal layer patterning. MECM test results showed feasibility of the fabricated electrode tools. The microfabricated electrodes can be used as micromachining tools for various electrical micromachining of steel mold and parts of microdevices.


2003 ◽  
Vol 783 ◽  
Author(s):  
Alex Katsnelson ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Serge Oktyabrsky

ABSTRACTA method for hybrid integration of III-V optoelectronic components on Si substrate using BCB was demonstrated. The method included bonding, selective wet etching of the GaAs substrate, components separation by wet etching, two-level metallization and lateral oxidation to form optical apertures. Simulations of thermal behavior and mechanical stresses of this integration scheme were performed using finite element analysis, which revealed adequate heat dissipation. Simulations show that this bonding protocol allows reduction of overheating and mechanical stress that enhances the optoelectronic device performance and increases reliability. Electro-luminescence spectrum, I-V and P-T characteristics were measured and compared with a reference homoepitaxial structure and the results of the simulations. Measured thermal impedance was found to be less then two times higher than that for the devices on a host GaAs wafer. Novel method of substrate removal named oxidation lift-off was proposed and demonstrated. This process allows to release a VCSEL structure with epitaxial DBRs and separate individual components on Si, reduces the number of process steps and eventually reduces cost of the fabricated devices. Au/Ge alloy was used for the metal bonding of the test oxidation lift-off structure. Substrate removal, device separation, bonding and formation of the oxide apertures were done within a single processing step.


2018 ◽  
Vol 9 ◽  
pp. 311-320 ◽  
Author(s):  
Chong-You Chen ◽  
Chang-Ming Wang ◽  
Hsiang-Hua Li ◽  
Hong-Hseng Chan ◽  
Wei-Ssu Liao

The creation of bioactive substrates requires an appropriate interface molecular environment control and adequate biological species recognition with minimum nonspecific attachment. Herein, a straightforward approach utilizing chemical lift-off lithography to create a diluted self-assembled monolayer matrix for anchoring diverse biological probes is introduced. The strategy encompasses convenient operation, well-tunable pattern feature and size, large-area fabrication, high resolution and fidelity control, and the ability to functionalize versatile bioarrays. With the interface-contact-induced reaction, a preformed alkanethiol self-assembled monolayer on a Au surface is ruptured and a unique defect-rich diluted matrix is created. This post lift-off region is found to be suitable for insertion of a variety of biological probes, which allows for the creation of different types of bioactive substrates. Depending on the modifications to the experimental conditions, the processes of direct probe insertion, molecular structure change-required recognition, and bulky biological species binding are all accomplished with minimum nonspecific adhesion. Furthermore, multiplexed arrays via the integration of microfluidics are also achieved, which enables diverse applications of as-prepared substrates. By embracing the properties of well-tunable pattern feature dimension and geometry, great local molecular environment control, and wafer-scale fabrication characteristics, this chemical lift-off process has advanced conventional bioactive substrate fabrication into a more convenient route.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Nursidik Yulianto ◽  
Andam Deatama Refino ◽  
Alina Syring ◽  
Nurhalis Majid ◽  
Shinta Mariana ◽  
...  

AbstractThe integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).


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