Research of etching process of Al0.8Sc0.2N based on ICP etching equipment

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

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An Optimized ICP Etching Process for Pyramidal C-QWIP FPAs

MRS Proceedings ◽

10.1557/opl.2012.1118 ◽

2012 ◽

Vol 1427 ◽

Author(s):

Jason Sun ◽

Kwong-kit Choi ◽

Unchul Lee

Keyword(s):

Photoelectron Spectroscopy ◽

Quantum Wire ◽

Inductively Coupled Plasma ◽

Etching Rate ◽

Focal Plane Arrays ◽

Etching Process ◽

Electrical Measurements ◽

Process Technology ◽

Icp Etching ◽

Etching Profile

ABSTRACTWe developed an optimized inductively coupled plasma (ICP) etching process to produce GaAs pyramidal corrugated quantum well infrared photodetector focal plane arrays. A statistically-designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the effect on the etching rate and profile. This process uses a small amount of mask corrosion and the control of the etching mask gap to give a 45-50 degree V-groove etching profile, which is independent on the crystal orientation of GaAs. In the etching development, scanning electron microscope (SEM) was used to observe the surface morphology and the pattern profile. In addition, X-ray photoelectron spectroscopy (XPS) was utilized to obtain the elemental composition and the contamination of the etching surface. It is found that extremely small stoichiometric change and surface damage of the etching surface can be achieved while keeping relatively high etching rate and ~45 degree V-groove etching profile. This etching process is applied to the fabrication of pyramidal C-QWIP FPAs, which is expected to have better performance than the regular prism-shaped C-QWIPs according to electromagnetic (EM) modeling. The expected results will be verified by optical and electrical measurements. In addition to infrared detectors, this process technology can also be applied to GaAs V-groove solar cell, quantum wire light-emitting diodes, quantum wire lasers, and other GaAs –based devices.

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BCB Deep Via Etching Process on ICP Etching System

ECS Meeting Abstracts ◽

10.1149/ma2005-01/13/594 ◽

2005 ◽

Keyword(s):

Etching Process ◽

Icp Etching ◽

Etching System

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ICP Etching Process Development based on Cl2/H2 Chemistry and Adapted to Non-Thermalized InP Wafers for the Realization of High Aspect Ratio and Vertical Sidewall Deep Ridge Waveguides and Buried Heterostructures

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ◽

10.1109/iciprm.2006.1634164 ◽

2006 ◽

Cited By ~ 1

Author(s):

S. Guilet ◽

S. Bouchoule ◽

C. Jany ◽

C.S. Corr ◽

P. Chabert

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Process Development ◽

Etching Process ◽

Vertical Sidewall ◽

Icp Etching ◽

Ridge Waveguides

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The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl2-Based Plasma for Integrated Optics Applications

Micromachines ◽

10.3390/mi12121535 ◽

2021 ◽

Vol 12 (12) ◽

pp. 1535

Author(s):

Sergey Ishutkin ◽

Vadim Arykov ◽

Igor Yunusov ◽

Mikhail Stepanenko ◽

Vyacheslav Smirnov ◽

...

Keyword(s):

Surface Roughness ◽

Low Temperature ◽

Room Temperature ◽

Optical Loss ◽

Etching Process ◽

Gas Mixture ◽

Preliminary Heating ◽

Etching Depth ◽

Icp Etching ◽

Substrate Temperatures

Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl2-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching process low-volatility InClx components are formed and at insufficient temperatures are deposited onto substrate, leading to the formation of defects and further impossibility of the formation of waveguide structures. The need to preheat the substrate limits the application of chlorine processes. This paper presents a method of ICP etching an InP/InGaAsP heterostructure in a Cl2/Ar/N2 gas mixture. A feature of the developed method is the cyclic etching of the heterostructure without preliminary heating. The etching process starts at room temperature. In the optimal etching mode, the angle of inclination of the sidewalls of the waveguides reached 88.8° at an etching depth of more than 4.5 μm. At the same time, the surface roughness did not exceed 30 nm. The selectivity of the etching process with respect to the SiNx mask was equal to 9. Using the developed etching method, test integrated waveguide elements were fabricated. The fabricated active integrated waveguide (p-InP epitaxial layers were not removed) with a width of 2 μm demonstrated an optical loss around 11 ± 1.5 dB/cm at 1550 nm. The insertion loss of the developed Y- and MMI-splitters did not exceed 0.8 dB.

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Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Nanoscale Research Letters ◽

10.1186/s11671-021-03479-1 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Jing Ma ◽

Yongqiang Zhao ◽

Wen Liu ◽

Peishuai Song ◽

Liangliang Yang ◽

...

Keyword(s):

Plasma Etching ◽

Inductively Coupled Plasma ◽

Fabrication Process ◽

Etching Process ◽

Photon Absorption ◽

Hydrophobic Property ◽

Water Contact ◽

Inductively Coupled ◽

Icp Etching

AbstractGaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Download Full-text