Near-field Probe Radiation Profile Boundaries Assessment for Optimal Radiated RF Power Susceptibility Pre-mapping

In this paper, the near-field radiated susceptibility pre-mapping method is proposed using the improved near-field probe power radiation profile assessment. The modelling of the electromagnetic field strength in 80–3000 MHz range in the proximity of the near-field probe was performed. The −6 dB aperture boundaries of the near-field probe and their variation, due to the proximity of the radio frequency (RF) printed circuit board (PCB) components, were determined, while the aperture map distortion, arising from the proximity of the passive RF PCB components were evaluated. The scanning path requirements for the RF susceptibility mapping were determined. The simulation of improved near-field probe absolute magnetic field strength reference map in open-air conditions is carried out in this work. The comparative analysis using the absolute maximum difference metric of orthogonal absolute magnetic field map cross-sections between the reference map and magnetic field maps affected by the proximity of the components was carried out. The experimental study of the RF amplifier stage susceptibility map with susceptibility mapping measurement results are presented in this work.

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Measurements of the RF Power Absorption in Spheroidal Human and Animal Phantoms Exposed to the Near Field of a Dipole Source

IEEE Transactions on Biomedical Engineering ◽

10.1109/tbme.1981.324698 ◽

1981 ◽

Vol BME-28 (3) ◽

pp. 258-264 ◽

Cited By ~ 13

Author(s):

Magdy F. Iskander ◽

Habib Massoudi ◽

Carl H. Durney ◽

Stewart J. Allen

Keyword(s):

Near Field ◽

Dipole Source ◽

Rf Power ◽

Power Absorption

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Analysis, Design and Realization of a Near-Field Focused RF Power Transfer System

Journal of Physics Conference Series ◽

10.1088/1742-6596/476/1/012118 ◽

2013 ◽

Vol 476 ◽

pp. 012118 ◽

Cited By ~ 7

Author(s):

R van der Linden ◽

H J Visser

Keyword(s):

Near Field ◽

Transfer System ◽

Power Transfer ◽

Rf Power ◽

Analysis Design

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Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors

2015 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2015.7166945 ◽

2015 ◽

Cited By ~ 3

Author(s):

Rui Hou ◽

Marco Spirito ◽

Rob Heeres ◽

Fred van Rijs ◽

Leo C.N. de Vreede

Keyword(s):

Near Field ◽

Rf Power ◽

Power Transistors

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Near-field scanning optical microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144644 ◽

1986 ◽

Vol 44 ◽

pp. 642-643

Author(s):

E. Betzig ◽

A. Harootunian ◽

M. Isaacson ◽

A. Lewis

Keyword(s):

Near Field ◽

Optical Microscope ◽

Visible Radiation ◽

Field Methods ◽

Optical Elements ◽

Optical Region ◽

Order Of Magnitude ◽

Nondestructive Imaging ◽

Scanning Optical Microscopy ◽

Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

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Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100173169 ◽

1990 ◽

Vol 48 (4) ◽

pp. 6-7

Author(s):

S.K. Streiffer ◽

C.B. Eom ◽

J.C. Bravman ◽

T.H. Geballet

Keyword(s):

Thin Films ◽

Room Temperature ◽

Deposition Process ◽

Nucleation And Growth ◽

Multilayer Structures ◽

Rf Power ◽

Oxygen Loss ◽

Transmission Electron ◽

Single Target ◽

Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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Analysis of Sputtered Zinc Oxide Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001781 ◽

1980 ◽

Vol 38 ◽

pp. 416-417

Author(s):

T. A. Emma ◽

M. P. Singh

Keyword(s):

Electron Microscopy ◽

Zinc Oxide ◽

Piezoelectric Materials ◽

Oxide Films ◽

Optical Quality ◽

Zno Films ◽

Rf Power ◽

X Ray Diffraction ◽

Sputtered Films ◽

Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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