Improvement of data retention time using DRAM cell with metallic shield embedded (MSE)-STI for 90nm technology node and beyond
Keyword(s):
2009 ◽
Vol 30
(8)
◽
pp. 846-848
◽
Influence of Surrounding Dielectrics on the Data Retention Time of Doped Sb2Te Phase Change Material
2011 ◽
Vol 50
(2R)
◽
pp. 024102
◽
Keyword(s):
Keyword(s):