Chemiresistive sensors based on electrospun tin oxide nanofibers for detecting NO2 at the sub-0.1 ppm level

Author(s):  
Sergio Masa ◽  
Esther Hontanon ◽  
Jose Pedro Santos ◽  
Isabel Sayago ◽  
Jesus Lozano
Keyword(s):  
2021 ◽  
Vol 6 (1) ◽  
pp. 69
Author(s):  
Caroline Duc ◽  
Mohamed-Lamine Boukhenane ◽  
Thomas Fagniez ◽  
Nathalie Redon ◽  
Jean-Luc Wojkiewicz

Coming from natural and anthropogenic sources, hydrogen sulfide gas (H2S) is a smelly hazardous substance at the sub-ppm level, which can lead to poisoning deaths at higher concentrations. New sensors with high metrological properties (detection limit lower than 1 ppm) and good stability are still needed to monitor and control the risk associated with this gas. The properties of a high-performance hydrogen sulfide gas sensor based on tin oxide and conductive polymers (polyaniline and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) are investigated. The principle of detection of this resistive sensor consists of a two steps reaction. H2S reacts with tin oxide producing hydrochloride acid, which dopes polyaniline, leading to the increase of its conductivity. Those systems present high repeatability and reproducibility, with sensitivities around 10%/ppm and a limit of detection close to 30 ppb. Moreover, the effect of interfering species such as humidity and oxidative gases (ammonia) is addressed. Those species have a limited impact, corrigible by data treatment. Finally, the sensors present an increase of sensitivity with time, apparently due to the modification of the interface between the electrodes and the sensitive materials.


2018 ◽  
Vol 531 ◽  
pp. 74-82 ◽  
Author(s):  
Yiqun Zhang ◽  
Linsheng Zhou ◽  
Yueying Liu ◽  
Deye Liu ◽  
Fengmin Liu ◽  
...  

2008 ◽  
Vol 130 (1) ◽  
pp. 391-395 ◽  
Author(s):  
A SETARO ◽  
A BISMUTO ◽  
S LETTIERI ◽  
P MADDALENA ◽  
E COMINI ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (24) ◽  
pp. 18666-18672 ◽  
Author(s):  
Dongzhi Zhang ◽  
Jingjing Liu ◽  
Hongyan Chang ◽  
Aiming Liu ◽  
Bokai Xia

This paper demonstrated a hybrid composite of tin oxide–reduced graphene oxide (rGO) for ppm-level detection of ethanol vapour.


2019 ◽  
Vol 14 (8) ◽  
pp. 828-830 ◽  
Author(s):  
Weihua Meng ◽  
Weihong Wu ◽  
Weiwei Zhang ◽  
Luyao Cheng ◽  
Yunhong Jiao ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>


2020 ◽  
Vol 13 (4) ◽  
pp. 722-727
Author(s):  
ZHU Ye-xin ◽  
◽  
◽  
LI Ya-nan ◽  
SHI Wei-jie ◽  
...  

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