Effects of residual stress in the membrane on the performance of surface micromachining silicon nitride pressure sensor

Author(s):  
Hao Jiang ◽  
Gang Cao ◽  
Chunlin Xu ◽  
Zefeng Zhang ◽  
Sheng Liu
1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.


1999 ◽  
Author(s):  
Todd F. Miller ◽  
David J. Monk ◽  
Gary O’Brien ◽  
William P. Eaton ◽  
James H. Smith

Abstract Surface micromachining is becoming increasingly popular for microelectromechanical systems (MEMS) and a new application for this process technology is pressure sensors. Uncompensated surface micromachined piezoresistive pressure sensors were fabricated by Sandia National Labs (SNL). Motorola packaged and tested the sensors over pressure, temperature and in a typical circuit application for noise characteristics. A brief overview of surface micromachining related to pressure sensors is described in the report along with the packaging and testing techniques used. The electrical data found is presented in a comparative manner between the surface micromachined SNL piezoresistive polysilicon pressure sensor and a bulk micromachined Motorola piezoresistive single crystal silicon pressure sensor.


1994 ◽  
Vol 356 ◽  
Author(s):  
V. M. Paviot ◽  
J. J. Vlassak ◽  
W. D. Nix

AbstractFree-standing films of gold and aluminum have been fabricated using standard micro-machining techniques. LPCVD silicon nitride films are deposited onto (100) silicon wafers. Square and rectangular silicon nitride membranes are made by anisotropic etching of the silicon substrates. Then, metal films are deposited onto the silicon nitride membranes by means of evaporation. Finally, the sacrificial silicon nitride film is etched away by means of reactive plasma etching, resulting in well-defined, square and rectangular metal membranes.Bulge testing of square windows allows one to determine the biaxial modulus of the film as well as the residual stress in it. Testing rectangular windows yields the plane-strain elastic modulus and the residual stress. Since deformation in rectangular membranes approaches plane-strain deformation, this geometry is ideal for studying the plastic properties of the metal films. Stress-strain curves can be readily determined from the load-deflection curves of rectangular membranes. The gold films have a biaxial modulus of 161±3 GPa and a plane-strain modulus of 105±5 GPa, slightly lower than the literature values for a (111) textured film. The yield stress of these films is approximately 231±17 MPa at 10−4% plastic strain. The elastic moduli of the aluminum films are 105±3 GPa and 76.4±0.7 GPa, respectively; the yield stress of these films is 187±30MPa.


1996 ◽  
Vol 444 ◽  
Author(s):  
Xin Zhang ◽  
Yitshak Zohar ◽  
Tong-Yi Zhang

AbstractA variety of rotating micro structures were designed, fabricated and characterized for residual-stress (or strain) measurements in low-stress silicon nitride thin films, deposited by LPCVD on silicon wafers. The sensitivities of the micro structures were calculated by finite element method (FEM) and verified experimentally. The results were further confirmed by utilizing the wafer-curvature method for stress measurements. The size of the structures enables local residual-stress (or strain) measurement. The stress level depends on both the film thickness and the gas ratio and also varies with the location on the wafer.


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