Development of a Switching Circuit for the Operation of a Multichannel System in Reception and Emission Modes

Author(s):  
Victor I. Shlaev ◽  
Maria V. Bilchuk ◽  
Sergey A. Tyasto
2019 ◽  
Vol 139 (8) ◽  
pp. 345-350
Author(s):  
Toru Tagawa ◽  
Tomohiko Yamashita ◽  
Takashi Sakugawa ◽  
Sunao Katsuki ◽  
Kenzi Hukuda ◽  
...  

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1048
Author(s):  
Muhammad Nasir Ullah ◽  
Yuseung Park ◽  
Gyeong Beom Kim ◽  
Chanho Kim ◽  
Chansun Park ◽  
...  

We propose an integrated front-end data acquisition circuit for a hybrid ultrasound (US)-gamma probe. The proposed circuit consists of three main parts: (1) a preamplifier for the gamma probe, (2) a preprocessing analog circuit for the US, and (3) a digitally controlled analog switch. By exploiting the long idle time of the US system, an analog switch can be used to acquire data of both systems using a single output channel simultaneously. On the nuclear medicine (NM) gamma probe side, energy resolutions of 18.4% and 17.5% were acquired with the standalone system and with the proposed switching circuit, respectively, when irradiated with a Co-57 radiation source. Similarly, signal-to-noise ratios of 14.89 and 13.12 dB were achieved when US echo signals were acquired with the standalone system and with the proposed switching circuit, respectively. Lastly, a combined US-gamma probe was used to scan a glass target and a sealed radiation source placed in a water tank. The results confirmed that, by using a hybrid US-gamma probe system, it is possible to distinguish between the two objects and acquire structural information (ultrasound) alongside molecular information (gamma radiation source).


2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.


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