Innovative nitride passivation of 0.1 μm InGaAs/InAlAs/InP HEMTs using high-density inductively coupled plasma CVD (HD-ICP-CVD)

Author(s):  
Y.C. Chou ◽  
R. Lai ◽  
G.P. Li ◽  
P. Nam ◽  
R. Grundbacher ◽  
...  
2009 ◽  
Vol 6 (S1) ◽  
pp. S582-S587 ◽  
Author(s):  
Sandro Jatta ◽  
Klaus Haberle ◽  
Andreas Klein ◽  
Robert Schafranek ◽  
Benjamin Koegel ◽  
...  

2013 ◽  
Vol 562-565 ◽  
pp. 996-1000
Author(s):  
Zhen Zhou ◽  
Zheng Fang Dong ◽  
Li Shuang Feng ◽  
Kun Bo Wang ◽  
Yin Zhou Zhi

SOI Ridge nanowire waveguide (RNW) has advantages of strong confinement of optical mode, low propagation loss, small bend radius and fully compatible with CMOS technique, etc. An ultra-compact Y-branch coupler based on SOI RNW was designed and fabricated. Based on the finite-difference beam propagation method (FD-BPM), key parameters of the coupler were analyzed. Then the device was fabricated by electron beam lithography (EBL) and inductively coupled plasma (ICP) reactive ion etching. Results showed that the propagation loss of RNW was 1.89 dB/mm, and the radiation loss of the coupler with branch angle of 30° was only 0.66 dB. Compared with traditional Y-branch coupler, the proposed structure were more promising for high density optical integrated circuits.


1987 ◽  
Vol 50 (17) ◽  
pp. 1130-1132 ◽  
Author(s):  
R. W. Boswell ◽  
R. K. Porteous

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