pH sensing characteristics of silicon nitride thin film and silicon nitride-based ISFET sensor

2013 ◽  
Author(s):  
Khairul Aimi Yusof ◽  
Nurul Izzati Mohammad Noh ◽  
Sukreen Hana Herman ◽  
Ali Zaini Abdullah ◽  
Maizatul Zolkapli ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Ph Sensing ◽  
Sensing Characteristics

scholarly journals pH Sensing Characteristics of CuS/ZnO Thin Film Implemented as EGFET

2018 ◽  
Vol 1083 ◽  
pp. 012055 ◽  
Author(s):  
Fayroz A. Sabah ◽  
Naser M. Ahmed ◽  
Z. Hassan
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Ph Sensing ◽  
Sensing Characteristics

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Titanium Nitride Thin Film Based Low-Redox-Interference Potentiometric pH Sensing Electrodes

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 42
Author(s):  
Shimrith Paul Shylendra ◽  
Wade Lonsdale ◽  
Magdalena Wajrak ◽  
Mohammad Nur-E-Alam ◽  
Kamal Alameh
Keyword(s):  
Thin Film ◽  
Titanium Nitride ◽  
Orange Juice ◽  
Ph Sensor ◽  
Reference Electrode ◽  
Cost Effective ◽  
Ph Sensing ◽  
Ph Sensors ◽  
Potential Shift ◽  
Double Junction

In this work, a solid-state potentiometric pH sensor is designed by incorporating a thin film of Radio Frequency Magnetron Sputtered (RFMS) Titanium Nitride (TiN) working electrode and a commercial Ag|AgCl|KCl double junction reference electrode. The sensor shows a linear pH slope of −59.1 mV/pH, R2 = 0.9997, a hysteresis as low as 1.2 mV, and drift below 3.9 mV/h. In addition, the redox interference performance of TiN electrodes is compared with that of Iridium Oxide (IrO2) counterparts. Experimental results show −32 mV potential shift (E0 value) in 1 mM ascorbic acid (reducing agent) for TiN electrodes, and this is significantly lower than the −114 mV potential shift of IrO2 electrodes with sub-Nernstian sensitivity. These results are most encouraging and pave the way towards the development of miniaturized, cost-effective, and robust pH sensors for difficult matrices, such as wine and fresh orange juice.

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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