scholarly journals Photoresistors made of CdхHg1-хTematerial(a review)

2021 ◽  
Vol 9 (2) ◽  
pp. 112-127
Keyword(s):  
Gallium Arsenide ◽  
Solid Solutions ◽  
High Voltage ◽  
Power Output ◽  
Liquid Nitrogen Temperature ◽  
Charge Carriers ◽  
Specific Detection ◽  
Domestic Technology ◽  
A Value ◽  
Highly Sensitive

The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.

scholarly journals High-Resolution Photoabsorption Spectrum of Cs+ (5p61So + 5p5ns, nd) Between 504A and 600A using a Laser Ionized Cs Vapor Column

1984 ◽  
Vol 86 ◽  
pp. 124-124
Author(s):  
T.J. McIlrath ◽  
V. Kaufman ◽  
J. Sugar ◽  
W.T. Hill ◽  
D. Cooper
Keyword(s):  
High Resolution ◽  
Laser Pulse ◽  
High Voltage ◽  
Power Output ◽  
Random Phase ◽  
Grazing Incidence ◽  
Fano Resonances ◽  
Line Shapes ◽  
Phase Calculation ◽  
Photoabsorption Spectrum

Rapid ionization of Cs vapor in a heat pipe at 0.05 torr was achieved by pumping the 6s 2S½ – 7p 2P½ transition (f=0.007)1 with a flash-pumped dye laser at 4593.2A and I MW power output. Photoabsorptian initiated at the end of the laser pulse(≃ 0.5/s) showed the 5p5ns and nd series below and above the 5p52P3/2 threshold at 535.4A. Broad Beutler - Fano resonances appeared in the d series above threshold. The spectrum was recorded photographically on a 10.7m grazing incidence spectrograph using a continuum background generated by a BRV high-voltage spark source with a uranium anode. We will compare the line-shapes and the quantum defect (Lu-Fano2) plot with the predictions of a relativistic random phase calculation.

Dielectric relaxation of free charge carriers in some fluorite-type solid solutions

1998 ◽  
Vol 244 ◽  
pp. 201-206 ◽  
Author(s):  
E.F. Hairetdinov ◽  
N.F. Uvarov ◽  
J.-M. Reau ◽  
P. Hagenmuller
Keyword(s):  
Dielectric Relaxation ◽  
Solid Solutions ◽  
Charge Carriers ◽  
Free Charge ◽  
Fluorite Type

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Highly sensitive and specific detection of Giardia duodenalis, Entamoeba histolytica, and Cryptosporidium spp. in human stool samples by the BD MAX™ Enteric Parasite Panel

2017 ◽  
Vol 117 (2) ◽  
pp. 447-451 ◽  
Author(s):  
Marijo Parčina ◽  
Ingrid Reiter-Owona ◽  
Frank P. Mockenhaupt ◽  
Valerija Vojvoda ◽  
Jean Bosco Gahutu ◽  
...  
Keyword(s):  
Entamoeba Histolytica ◽  
Giardia Duodenalis ◽  
Specific Detection ◽  
Cryptosporidium Spp ◽  
Highly Sensitive ◽  
Stool Samples ◽  
Human Stool

Invalid estimates of rate of population increase from Glossina (Diptera: Glossinidae) age distributions

1988 ◽  
Vol 78 (1) ◽  
pp. 155-161 ◽  
Author(s):  
J. Van Sickle
Keyword(s):  
Sampling Error ◽  
Age Distribution ◽  
Population Increase ◽  
Sampling Errors ◽  
True Rate ◽  
Survivorship Curve ◽  
A Value ◽  
Tsetse Population ◽  
Rate Of Increase ◽  
Highly Sensitive

AbstractSeveral published reports have presented estimates of the rate of increase, r, based on sampled ovarian age distributions from Glossina populations throughout Africa. These estimates are invalid, because an age distribution sampled at one point in time can be equated to a survivorship curve only if r = 0. When such a survivorship curve and a corresponding fecundity schedule are then used to estimate r via the Euler-Lotka equation, the result is a value of r near zero, regardless of the population's true rate of increase. Synthetic sampling from a hypothetical tsetse population confirmed that estimates computed in this fashion are entirely the products of sampling error. Valid estimates of r can sometimes be obtained from an age distribution, using an alternative method, but such estimates are highly sensitive to sampling errors in the distribution.

Picosecond high-voltage drift diodes based on gallium arsenide

2003 ◽  
Vol 37 (12) ◽  
pp. 1425-1427 ◽  
Author(s):  
A. V. Rozhkov ◽  
V. A. Kozlov
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Voltage Drift

scholarly journals Термоэлектрические свойства твердых растворов (CuInSe-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(In-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-)-=SUB=-x-=/SUB=-

2022 ◽  
Vol 56 (1) ◽  
pp. 38
Author(s):  
Ч.И. Абилов ◽  
М.Ш. Гасанова ◽  
Н.Т. Гусейнова ◽  
Э.К. Касумова
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Solid Solutions ◽  
Figure Of Merit ◽  
Charge Carriers ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Thermoelectric Coefficient

The results of studying the temperature dependences of electrical conductivity, thermoelectric coefficient, Hall mobility of charge carriers, total and electronic thermal conductivity, as well as phonon thermal resistance of alloys of (CuInSe2)1-x(In2Te3)x solid solutions at x=0.005 and 0.0075 are presented. The values ​​of these parameters for certain temperatures were used to calculate the values ​​of the thermoelectric figure of merit of the indicated compositions. It turned out that as the temperature rises, the thermoelectric figure of merit tends to grow strongly, from which it can be concluded that these materials can be used in the manufacture of thermoelements.

scholarly journals PERANCANGAN PENGUKURAN TEGANGAN TINGGI PADA MODUL PEMBANGKIT TEGANGAN TINGGI IMPULS

TRANSIENT ◽  
2019 ◽  
Vol 7 (4) ◽  
pp. 1002
Author(s):  
Chyntia Dewi Candra Pravitasari ◽  
Abdul Syakur ◽  
Budi Setiyono
Keyword(s):  
High Voltage ◽  
Average Error ◽  
Measuring Instruments ◽  
Measuring Device ◽  
Final Project ◽  
A Value ◽  
Voltage Generator ◽  
Monitoring Module ◽  
Impulse High Voltage ◽  
High Voltage Generator

Measurement of high voltage AC, DC and Impulses on a laboratory scale using expensive measuring instruments. In addition, the measurements taken are at a voltage level of 15 KV. Integrated measurement of high voltage AC, DC and Impulses for 15 KV voltage levels using sign transformers has never been done. Whereas high voltage generation using a sign transformer is only able to generate voltage up to 15 KV voltage only. For that we need a voltage measuring device that is able to measure up to a voltage of 15 KV, and does not require expensive costs. In this Final Project, a high voltage monitoring module for impulse high voltage generator module will be designed using visual studio c #. The results of monitoring the high voltage generator module on the C # visual studio form successfully went well. The voltage test performed produces a value close to the actual value with an average error of 0.01 volts. Unfortunately this test is still not perfect because it is still susceptible to noise so that the measurement process is often interrupted.

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