Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
2009 ◽
Vol 26
(11)
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pp. 118101
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2018 ◽
Vol 6
(2)
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pp. 025907
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2013 ◽
Vol 551
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pp. 551-555
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2019 ◽
Vol 8
(10)
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pp. P563-P566
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2017 ◽
Vol 5
(5)
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pp. 362-366
2012 ◽
Vol 51
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pp. 064101
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