Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 ◽  
Author(s):  
Yiming Li ◽  
Han-Tung Chang ◽  
Chun-Ning Lai ◽  
Pei-Jung Chao ◽  
Chieh-Yang Chen
Keyword(s):  
Work Function ◽  
Process Variation ◽  
Silicon Nanowire ◽  
Metal Gate ◽  
Random Dopant Fluctuation ◽  
Silicon Nanowire Mosfet ◽  
Nanowire Mosfet ◽  
Gate Work Function ◽  
Function Fluctuation ◽  
Random Dopant

scholarly journals Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function

2011 ◽  
Vol 2 (1) ◽  
pp. 11-24 ◽  
Author(s):  
Deepesh Ranka ◽  
Ashwani K. Rana ◽  
Rakesh Kumar Yadav ◽  
Kamalesh Yadav ◽  
Devendra Giri
Keyword(s):  
Performance Evaluation ◽  
Work Function ◽  
Metal Gate ◽  
Gate Work Function

Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

2010 ◽  
Vol 87 (9) ◽  
pp. 1805-1807 ◽  
Author(s):  
Zilan Li ◽  
Tom Schram ◽  
Thomas Witters ◽  
Joshua Tseng ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Oxygen Incorporation ◽  
Integration Approach ◽  
Work Function Tuning ◽  
Gate Work Function
Sign in / Sign up

Export Citation Format

Share Document