Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2036309 ◽

2010 ◽

Vol 57 (2) ◽

pp. 437-447 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Tien-Yeh Li ◽

Ming-Hung Han

Keyword(s):

Work Function ◽

Process Variation ◽

Random Dopant Fluctuation ◽

Gate Work Function ◽

Function Fluctuation ◽

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Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409827 ◽

2015 ◽

Author(s):

Yiming Li ◽

Han-Tung Chang ◽

Chun-Ning Lai ◽

Pei-Jung Chao ◽

Chieh-Yang Chen

Keyword(s):

Work Function ◽

Process Variation ◽

Silicon Nanowire ◽

Random Dopant Fluctuation ◽

Silicon Nanowire Mosfet ◽

Nanowire Mosfet ◽

Gate Work Function ◽

Function Fluctuation ◽

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Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604544 ◽

2010 ◽

Author(s):

Chia-Hui Yu ◽

Ming-Hung Han ◽

Hui-Wen Cheng ◽

Zhong-Cheng Su ◽

Yiming Li ◽

...

Keyword(s):

Work Function ◽

Statistical Simulation ◽

Gate Work Function ◽

Function Fluctuation

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Metal-gate work-function fluctuation in 16-nm single- and multi-fin field effect transistors with different aspect ratio

2010 IEEE International Conference on Semiconductor Electronics (ICSE2010) ◽

10.1109/smelec.2010.5549472 ◽

2010 ◽

Author(s):

Hui-Wen Cheng ◽

Yiming Li

Keyword(s):

Aspect Ratio ◽

Work Function ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Work Function ◽

Function Fluctuation

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Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab6bfb ◽

2020 ◽

Vol 35 (3) ◽

pp. 035015

Author(s):

Min Soo Bae ◽

Ilgu Yun

Keyword(s):

Work Function ◽

Oxide Thickness ◽

Thickness Variation ◽

Process Variability ◽

Random Dopant Fluctuation ◽

Gate Work Function ◽

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Variability of Threshold Voltage Induced by Work-Function Fluctuation and Random Dopant Fluctuation on Gate-All-Around Nanowire nMOSFETs

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870426 ◽

2019 ◽

Author(s):

Wen-Li Sung ◽

Min-Hui Chuang ◽

Yiming Li

Keyword(s):

Work Function ◽

Threshold Voltage ◽

Random Dopant Fluctuation ◽

Function Fluctuation ◽

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Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits

10.1109/sispad.2009.5290239 ◽

2009 ◽

Author(s):

Chih-Hong Hwang ◽

Tien-Yeh Li ◽

Ming-Hung Han ◽

Kuo-Fu Lee ◽

Hui-Wen Cheng ◽

...

Keyword(s):

Statistical Analysis ◽

Process Variation ◽

Cmos Circuits ◽

Random Dopant Fluctuation ◽

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High- $\kappa$ /Metal-Gate Work-Function Variation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2872586 ◽

2018 ◽

Vol 65 (11) ◽

pp. 4780-4785 ◽

Author(s):

Hyohyun Nam ◽

Changhwan Shin ◽

Jung-Dong Park

Keyword(s):

Work Function ◽

Material Properties ◽

Gate Work Function

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Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function

International Journal of VLSI Design & Communication Systems ◽

10.5121/vlsic.2011.2102 ◽

2011 ◽

Vol 2 (1) ◽

pp. 11-24 ◽

Author(s):

Deepesh Ranka ◽

Ashwani K. Rana ◽

Rakesh Kumar Yadav ◽

Kamalesh Yadav ◽

Devendra Giri

Keyword(s):

Performance Evaluation ◽

Work Function ◽

Gate Work Function

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Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

Microelectronic Engineering ◽

10.1016/j.mee.2009.10.023 ◽

2010 ◽

Vol 87 (9) ◽

pp. 1805-1807 ◽

Author(s):

Zilan Li ◽

Tom Schram ◽

Thomas Witters ◽

Joshua Tseng ◽

Stefan De Gendt ◽

...

Keyword(s):

Work Function ◽

Oxygen Incorporation ◽

Integration Approach ◽

Work Function Tuning ◽

Gate Work Function

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