A new direct growth of high quality graphene on Si-face of 6H-SiC by inner and external carbon sources catalyzed by Nickel

2017 ◽  
Author(s):  
Zhiyuan Yang ◽  
Lili Zhao ◽  
Jing Zhang ◽  
Li Sun ◽  
Fapeng Yu ◽  
...  
Keyword(s):  
Carbon Sources ◽  
High Quality ◽  
Direct Growth

scholarly journals Draft Genome Sequence ofBacillus subtilisIa1a, a New Strain for Poly-γ-Glutamic Acid and Exopolysaccharide Production

2016 ◽  
Vol 4 (6) ◽  
Author(s):  
Mohammad H. A. Ibrahim ◽  
Brady F. Cress ◽  
Robert J. Linhardt ◽  
Mattheos A. G. Koffas ◽  
Richard A. Gross
Keyword(s):  
Bacillus Subtilis ◽  
Glutamic Acid ◽  
Genome Sequence ◽  
Genome Assembly ◽  
Draft Genome ◽  
Carbon Sources ◽  
Draft Genome Sequence ◽  
High Quality ◽  
Exopolysaccharide Production ◽  
Draft Genome Assembly

We report here the 4.092-Mb high-quality draft genome assembly of a newly isolated poly-γ-glutamic acid–producing strain,Bacillus subtilisIa1a. The genome sequence is considered a critical tool to facilitate the engineering of improved production strains. Exopolysaccharides and many industrially important enzymes can be produced by this new strain utilizing different carbon sources.

Direct Growth of [100]-Oriented High-Quality β-FeSi2 Films on Si(001) Substrates by Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 2, No. 10A) ◽  
pp. L1008-L1011 ◽  
Author(s):  
Noriyoshi Hiroi ◽  
Takashi Suemasu ◽  
Ken'ichiro Takakura ◽  
Naoki Seki ◽  
Fumio Hasegawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Direct Growth

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

scholarly journals Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

2020 ◽  
Vol 10 (2) ◽  
pp. 639
Author(s):  
Minghui Gu ◽  
Chen Li ◽  
Yuanfeng Ding ◽  
Kedong Zhang ◽  
Shunji Xia ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Three Dimensional ◽  
High Mobility ◽  
Two Dimensional ◽  
Large Area ◽  
High Quality ◽  
Direct Growth

Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Direct Growth

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.

Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates

2004 ◽  
Vol 457-460 ◽  
pp. 1577-1580 ◽  
Author(s):  
F. Fossard ◽  
J. Brault ◽  
N. Gogneau ◽  
Eva Monroy ◽  
F. Enjalbert ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Direct Growth

Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO3 Substrates

2014 ◽  
Vol 136 (18) ◽  
pp. 6574-6577 ◽  
Author(s):  
Jingyu Sun ◽  
Teng Gao ◽  
Xiuju Song ◽  
Yanfei Zhao ◽  
Yuanwei Lin ◽  
...  
Keyword(s):  
High Quality ◽  
Direct Growth

Direct growth of etch pit-free GaN crystals on few-layer graphene

RSC Advances ◽  
2015 ◽  
Vol 5 (2) ◽  
pp. 1343-1349 ◽  
Author(s):  
Seung Jin Chae ◽  
Yong Hwan Kim ◽  
Tae Hoon Seo ◽  
Dinh Loc Duong ◽  
Seung Mi Lee ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
High Quality ◽  
Graphene Layers ◽  
Layer Graphene ◽  
Etch Pit ◽  
Direct Growth ◽  
Metal Organic ◽  
Few Layer Graphene

We report high-quality GaN crystals grown directly on graphene layers without a buffer layer by metal–organic chemical vapour deposition.

scholarly journals Correction: Direct growth of a porous substrate on high-quality graphene via in situ phase inversion of a polymeric solution

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 23282-23282
Author(s):  
Yanzhe Qin ◽  
Stephan Koehler ◽  
Yongyou Hu ◽  
Yuqing Wu ◽  
Xinwen Peng ◽  
...  
Keyword(s):  
Phase Inversion ◽  
Porous Substrate ◽  
High Quality ◽  
Polymeric Solution ◽  
Direct Growth

Correction for ‘Direct growth of a porous substrate on high-quality graphene via in situ phase inversion of a polymeric solution’ by Yanzhe Qin et al., Nanoscale, 2020, 12, 4953–4958, DOI: 10.1039/C9NR09693K.

Sign in / Sign up

Export Citation Format

Share Document