Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives

2002 ◽  
Author(s):  
D. Louis ◽  
A. Beverina ◽  
C. Arvet ◽  
E. Lajoinie ◽  
C. Peyne ◽  
...  
Keyword(s):  
State Of The Art ◽  
Cleaning Process ◽  
Low K ◽  
Copper State

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

2009 ◽  
Vol 145-146 ◽  
pp. 295-302 ◽  
Author(s):  
Lucile Broussous ◽  
W. Puyrenier ◽  
D. Rebiscoul ◽  
V. Rouessac ◽  
A. Ayral
Keyword(s):  
Surface Layer ◽  
Process Window ◽  
Cleaning Process ◽  
Design Rules ◽  
Porosity Evolution ◽  
Pore Sealing ◽  
Modified Surface ◽  
Wet Etch ◽  
Low K ◽  
Modified Surface Layer

In this study, the compatibility of "HF-Based" cleaning with porous low-k integration, and “pore-sealing” approach was investigated, and specific attention was paid to ultra low-k porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer), for 65nm and 45 nm design rules.

Removal of Post Etch Residue on BEOL Low-K with Nanolift

2021 ◽  
Vol 314 ◽  
pp. 277-281
Author(s):  
Yuya Akanishi ◽  
Quoc Toan Le ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Polymer Film ◽  
Thin Polymer Film ◽  
Particle Removal ◽  
Cleaning Process ◽  
K Value ◽  
Thin Polymer ◽  
Value Shift ◽  
Dry Etch ◽  
Removal Technique ◽  
Low K

Particle removal from BEOL low-k structures is studied using a novel particle removal technique, called Nanolift which removes particles from the substrate by forming a thin polymer film on the surface and removing the polymer film together with the particles. It was confirmed that Nanolift is capable to remove TiFx particles successfully which are generated during the low-k dry etch process for dual damascene structure formation for BEOL interconnect fabrication. Pattern collapse of the fragile low-k structure was confirmed to be prevented by Nanolift in comparison with conventional dual fluid spray cleaning method. FTIR results show that Nanolift leaves no residual polymer remain in low-k films and K-value shift by the Nanolift process was negligible and comparable with the conventional formulated chemistry cleaning process. From these results, Nanolift can be concluded as a suitable cleaning process for advanced BEOL fabrication process.

TiN Metal Hardmask Etch Residue Removal on Advanced Porous Low-k and Cu Device with Corner Rounding Scheme

2012 ◽  
Vol 187 ◽  
pp. 241-244 ◽  
Author(s):  
Hua Cui ◽  
Martine Claes ◽  
Samuel Suhard
Keyword(s):  
Etch Rate ◽  
Room Temperature ◽  
Complete Removal ◽  
Cleaning Process ◽  
Residue Removal ◽  
Tin Metal ◽  
User Friendly ◽  
Low K ◽  
Etch Residue

A novel wet cleaning formulation approach was developed with a TiN etch rate of more than 30 Å/min at room temperature and more than 100 Å/min at 50°C. The chemicals are compatible with Cu and low-k materials, and are suitable for Cu dual damascene interconnect 28 nm and smaller technology node applications. The chemicals offer a route to in situ controlled TiN pullback or even complete removal of the TiN mask during the cleaning process in single wafer tool applications. The chemicals do not contain NH4OH or TMAH and so are very user-friendly.

Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process

2007 ◽  
Vol 84 (11) ◽  
pp. 2600-2605 ◽  
Author(s):  
L. Broussous ◽  
W. Puyrenier ◽  
D. Rebiscoul ◽  
V. Rouessac ◽  
A. Ayral
Keyword(s):  
Structure Evolution ◽  
Cleaning Process ◽  
Low K

Metal Hard Mask Employed Cu/Low k Film Post Ash and Wet Clean Process Optimization and Integration into 65nm Manufacturing Flow

2007 ◽  
Vol 134 ◽  
pp. 359-362 ◽  
Author(s):  
Miao Chun Lin ◽  
Mei Qi Wang ◽  
Joe Lai ◽  
Ren Huang ◽  
Cheng Ming Weng ◽  
...  
Keyword(s):  
Mass Production ◽  
Process Integration ◽  
Cleaning Process ◽  
New Materials ◽  
Defect Modes ◽  
Hard Mask ◽  
Wafer Cleaning ◽  
New Challenges ◽  
Low K ◽  
Electrical Data

As 65nm technology in mass production and 45nm technology under development, post etch ash and cleaning faces new challenges with far more stringent requirements on surface cleanliness and materials loss. The introduction and integration of new materials, such as metal hard mask, creates additional requirements for wafer cleaning due to the occurrence of new defect modes related to metal hard mask. We have optimized a post etch ash process and developed a novel aqueous solution (AQ) based single wafer cleaning process to address these new defect modes. Physical characterization results and process integration electrical data are presented in this paper.

scholarly journals Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

2014 ◽  
Vol 1 (1) ◽  
pp. 011306 ◽  
Author(s):  
Alfred Grill ◽  
Stephen M. Gates ◽  
Todd E. Ryan ◽  
Son V. Nguyen ◽  
Deepika Priyadarshini
Keyword(s):  
Large Scale ◽  
State Of The Art ◽  
Low K

Aqueous Based Single Wafer Cleaning Process Development and Integration into 65nm Process Flow using Metal Hard Mask

2006 ◽  
Vol 914 ◽  
Author(s):  
Miao-Chun Lin ◽  
Mei-Qi Wang ◽  
Cheng-Ming Weng ◽  
Chopin Chou ◽  
JH Liao ◽  
...  
Keyword(s):  
Time Dependent ◽  
Metal Fluoride ◽  
Cleaning Process ◽  
Defect Modes ◽  
Hard Mask ◽  
Time Control ◽  
Wafer Cleaning ◽  
New Process ◽  
Low K ◽  
Electrical Data

AbstractAs the industry develops processes for the 65 and 45 nm technology nodes, post etch/ash cleaning faces new challenges with far more stringent requirements on surface cleanliness and materials loss. The introduction and integration of new materials, such as metal hard mask, creates additional requirements for wafer cleaning due to the occurrence of new defect modes related to metal hard mask. These include organometallic residue and metal fluorite compounds precipitating with time. We have developed a novel aqueous solution (AQ) based single wafer cleaning process to address these new defect modes. Physical characterization results and process integration electrical data and reliability data (TEM cross section review of the vias) are presented in this paper.The main conclusions can be summarized as follows: (1) In the dual damascene Cu/low-k process flow with hard mask, there are three typical residues after etch/ash: generic polymer residue, organometallic residue strongly bonded to metal maks, and time-dependent metal fluoride residue. (2) Generic polymer residue is very well characterized [1,2] and is usually easy to remove with solvent or aqueous solution [2,3]. (3)We developed an oxidizing chemistry based process to undercut the hard mask for the organometallic residue removal, which proved highly effective. (4)The time-dependent metal fluoride reside makes queue time control after etch/ash very critical (<1 hour). We developed a process with a fluorine based aqueous chemistry to address the metal fluoride residue, which proved highly effective. With this new process, queue time control is not required. (5) The post etch/ash cleaning for the Cu/low-k structure with metal hard mask typically employs the solvent/dry plasma ash multi-step procedure [4]. The new process developed in this research reduced the multi-step process to one wet clean step with two different aqueous chemistries in sequence. (6) The integration electrical data shows that the new single step aqueous cleaning process performance is comparable to, or even better than that from the solvent/dry plasma ash multi cleaning process. (7) Blanket Cu loss with the new process is about 23A/min, however TEM analysis of the vias after full integration shows Cu loss, we are working to improve the integration related Cu loss.

Yield improvement of 0.13 μm Cu/low-k dual-damascene interconnection by organic cleaning process

2007 ◽  
Vol 25 (6) ◽  
pp. 1819 ◽  
Author(s):  
Nam-Hoon Kim ◽  
Sang-Yong Kim ◽  
Hyun-Ki Lee ◽  
Kang-Yeon Lee ◽  
Chang-Il Kim ◽  
...  
Keyword(s):  
Cleaning Process ◽  
Yield Improvement ◽  
Dual Damascene ◽  
Low K
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