Line Edge Roughness (LER) correlation and dielectric reliability with Spacer-Defined Double Patterning (SDDP) at 20nm half pitch

2011 IEEE International Interconnect Technology Conference ◽

10.1109/iitc.2011.5940296 ◽

2011 ◽

Author(s):

Yong Kong Siew ◽

Michele Stucchi ◽

Janko Versluijs ◽

Philippe Roussel ◽

Eddy Kunnen ◽

...

Keyword(s):

Line Edge Roughness ◽

Edge Roughness ◽

Double Patterning

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Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

10.1117/12.2085812 ◽

2015 ◽

Author(s):

E. Dupuy ◽

E. Pargon ◽

M. Fouchier ◽

H. Grampeix ◽

J. Pradelles ◽

...

Keyword(s):

Spectral Analysis ◽

Line Edge Roughness ◽

Edge Roughness ◽

Double Patterning

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Resistivity Impact from Modulated Line-Edge-Roughness with Self-aligned Double Patterning

10.1109/iitc47697.2020.9515619 ◽

2020 ◽

Author(s):

Dewei Xu ◽

KuangChung Chuang ◽

Wayne Zhao ◽

Keith Donegan ◽

Seung-Yeop Kook ◽

...

Keyword(s):

Line Edge Roughness ◽

Edge Roughness ◽

Double Patterning

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Monte Carlo Simulation Study: the effects of double-patterning versus single-patterning on the line-edge-roughness (LER) in FDSOI Tri-gate MOSFETs

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2013.13.5.511 ◽

2013 ◽

Vol 13 (5) ◽

pp. 511-515 ◽

Author(s):

In Jun Park ◽

Changhwan Shin

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Simulation Study ◽

Line Edge Roughness ◽

Monte Carlo Simulation Study ◽

Edge Roughness ◽

Double Patterning

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Effect of double-patterning and double-etching on the line-edge-roughness of multi-gate bulk MOSFETs

IEICE Electronics Express ◽

10.1587/elex.10.20130108 ◽

2013 ◽

Vol 10 (5) ◽

pp. 20130108-20130108 ◽

Author(s):

In Jun Park ◽

Changhwan Shin

Keyword(s):

Line Edge Roughness ◽

Edge Roughness ◽

Double Patterning

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Key contributors for improvement of line width roughness, line edge roughness, and critical dimension uniformity: 15 nm half-pitch patterning with extreme ultraviolet and self-aligned double patterning

Journal of Micro/Nanolithography MEMS and MOEMS ◽

10.1117/1.jmm.12.4.041302 ◽

2013 ◽

Vol 12 (4) ◽

pp. 041302 ◽

Author(s):

Kaidong Xu ◽

Laurent Souriau ◽

David Hellin ◽

Janko Versluijs ◽

Patrick Wong ◽

...

Keyword(s):

Extreme Ultraviolet ◽

Critical Dimension ◽

Line Edge Roughness ◽

Edge Roughness ◽

Double Patterning

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Line edge roughness (LER) reduction strategies for EUV self-aligned double patterning (SADP)

Advanced Etch Technology and Process Integration for Nanopatterning X ◽

10.1117/12.2582556 ◽

2021 ◽

Author(s):

Eric Liu ◽

Katie Lutker-Lee ◽

Qiaowei Lou ◽

Ya-Ming Chen ◽

Angelique Raley ◽

...

Keyword(s):

Line Edge Roughness ◽

Edge Roughness ◽

Reduction Strategies ◽

Double Patterning

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Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique

Journal of Micro/Nanopatterning, Materials, and Metrology ◽

10.1117/1.jmm.20.2.024901 ◽

2021 ◽

Vol 20 (02) ◽

Author(s):

Eric Liu ◽

Katie Lutker-Lee ◽

Qiaowei Lou ◽

Ya-Ming Chen ◽

Angélique Raley ◽

...

Keyword(s):

Surface Modification ◽

Line Edge Roughness ◽

Inversion Technique ◽

Edge Roughness ◽

Double Patterning

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Characterization of Line-Edge Roughness in Cu/Low-kInterconnect Pattern

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2501 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2501-2505 ◽

Author(s):

Atsuko Yamaguchi ◽

Daisuke Ryuzaki ◽

Ken-ichi Takeda ◽

Jiro Yamamoto ◽

Hiroki Kawada ◽

...

Keyword(s):

Line Edge Roughness ◽

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Study of the acid-diffusion effect on line edge roughness using the edge roughness evaluation method

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1490392 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1342 ◽

Author(s):

Masaki Yoshizawa ◽

Shigeru Moriya

Keyword(s):

Evaluation Method ◽

Line Edge Roughness ◽

Diffusion Effect ◽

Acid Diffusion ◽

Edge Roughness ◽

On Line ◽

Roughness Evaluation

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Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2276072 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3277-3284 ◽

Author(s):

Greg Leung ◽

Chi On Chui

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Line Edge Roughness ◽

Random Dopant Fluctuation ◽

Edge Roughness ◽

Effect Transistor ◽

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