NAND Flash Relationship Between the Initial State of Non-Volatile Memory Cycling Endurance and the High Temperature Data Retention Ability of Post Cycling

2021 ◽  
Author(s):  
Chia-Sheng Huang ◽  
Yun-Chi Liao
Keyword(s):  
High Temperature ◽  
Temperature Data ◽  
Nand Flash ◽  
Data Retention ◽  
Initial State ◽  
High Temperature Data ◽  
Non Volatile Memory ◽  
Volatile Memory

Oxygen-doped Sb4Te phase change films for high-temperature data retention and low-power application

2013 ◽  
Vol 551 ◽  
pp. 551-555 ◽  
Author(s):  
Yifeng Hu ◽  
Mingcheng Sun ◽  
Sannian Song ◽  
Zhitang Song ◽  
Jiwei Zhai
Keyword(s):  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application

An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000226-000231
Author(s):  
Paul W. Moody ◽  
Marshall Soares
Keyword(s):  
High Temperature ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Soi Devices ◽  
Volatile Memory ◽  
Programmable Devices ◽  
Soi Cmos ◽  
Temperature Applications

Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.

Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention

2010 ◽  
Vol 31 (8) ◽  
pp. 869-871 ◽  
Author(s):  
Wally Czubatyj ◽  
Stephen J Hudgens ◽  
Charles Dennison ◽  
Carl Schell ◽  
Tyler Lowrey
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
Phase Change Memory ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Very High ◽  
Change Memory

Nitrogen-Doped Ge10Sb90 Phase Change Thin Films for High-Temperature Data Retention and High-Speed Application

2015 ◽  
Vol 44 (10) ◽  
pp. 3322-3326 ◽  
Author(s):  
X.Q. Zhu ◽  
Y.F. Hu ◽  
L. Yuan ◽  
Y.X. Sui ◽  
J.Z. Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Temperature Data ◽  
Data Retention ◽  
Nitrogen Doped ◽  
High Temperature Data

Multi-bit memory cell using long-range non-anchored actuation for high temperature applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000152-000159
Author(s):  
Mehrdad Elyasi ◽  
Chengkuo Lee ◽  
Cheng-Yu Hsieh ◽  
Dim-Lee Kwong
Keyword(s):  
High Temperature ◽  
Long Range ◽  
Memory Cell ◽  
Sliding Contact ◽  
Adhesion Forces ◽  
Data Retention ◽  
Conductive Path ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Cell Data

A novel micro-electro-mechanical (MEM) based non-volatile memory (NVM) is proposed. The storage principle is based on Lorentz's transduction, utilizing long-range motion of a non-anchored element which has current carrying sliding contact with a conductive path. Position of the moving element indicates the stored data in the multi-bit cell. Data is written in the cell with displacing the moving element by Lorentz's force, is read by utilizing differential port resistances, and is held by adhesion forces. Data writing at up to 300°C, and data retention and reading for higher temperatures are reliable.

Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

2011 ◽  
Vol 65 (4) ◽  
pp. 327-330 ◽  
Author(s):  
Cheng Peng ◽  
Liangcai Wu ◽  
Feng Rao ◽  
Zhitang Song ◽  
Xilin Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Power ◽  
Phase Change ◽  
Temperature Data ◽  
Data Retention ◽  
High Temperature Data ◽  
Power Application
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