Carbon-based sleep switch dynamic logic circuits with variable strength keeper for lower-leakage currents and higher-speed

2015 ◽  
Author(s):  
Yanan Sun ◽  
Volkan Kursun
Keyword(s):  
Dynamic Logic ◽  
Logic Circuits ◽  
Leakage Currents ◽  
Variable Strength ◽  
Carbon Based

DYNAMIC GaAs LOGIC CIRCUITS

1991 ◽  
Vol 02 (03) ◽  
pp. 163-183
Author(s):  
DAVID H.K. HOE ◽  
C. ANDRE T. SALAMA
Keyword(s):  
Power Dissipation ◽  
Clock Cycle ◽  
Dynamic Logic ◽  
Logic Circuits ◽  
System Throughput ◽  
Leakage Currents ◽  
Design And Implementation ◽  
Main Challenge ◽  
Dynamic Circuits ◽  
Functional Blocks

Because of their ratioless nature, dynamic logic has several advantages over conventional static techniques used in GaAs . The ability to implement complex gates with dynamic logic leads to circuits with increased speed and reduced power dissipation. Several dynamic configurations using GaAs MESFETs are reviewed. The main challenge is to overcome leakage currents associated with the Schottky gate junctions in order to allow reliable dynamic operation. The pipelining of GaAs dynamic circuits, which allows full use of the clock cycle and improves system throughput, is also discussed. The feasibility of using these dynamic designs in GaAs is illustrated through the design and implementation of complex functional blocks.

Nmos Logic Circuits in Laser-Crystallized Silicon on Quartz

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Chiang ◽  
M. H. Zarzycki ◽  
W. P. Meuli ◽  
N. M. Johnson
Keyword(s):  
High Performance ◽  
Logic Circuits ◽  
Leakage Currents ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Fused Quartz ◽  
Amorphous Substrates ◽  
Circular Beam ◽  
Processing Steps ◽  
Dynamic Shift

ABSTRACTDepletion mode as well as enhancement mode n-channel thin-film transistors (TFT's) have been fabricated in CO2 laser-crystallized silicon on fused quartz. Nearly defect-free islands were obtained by using an offset circular beam to form a tilted melt interface. The optimization of subsequent processing steps to achieve simultaneously low leakage currents and voltage thresholds appropriate for depletion-load NMOS circuits involved adjustments of ion implantation and high temperature cycles with the aid of simulation. The resultant high performance silicon-gate TFT's have led to NMOS ring oscillators with 2.5 ns delay/stage and dynamic shift registers with MHz clock rates. These are the first logic circuits fabricated in beam-crystallized silicon on bulk amorphous substrates.

Sign in / Sign up

Export Citation Format

Share Document