SHEPWM Class-D Amplifier with a Reconfigurable Gate Driver Integrated Circuit

2021 ◽  
Author(s):  
Nueraimaiti Aimaier ◽  
Nam Ly ◽  
Gabriel Nobert ◽  
Yves Blaquiere ◽  
Nicolas Constantin ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Class D Amplifier ◽  
Class D ◽  
Gate Driver

Study of Harmonic Suppression Method Based on the Class D Amplifier

2013 ◽  
Vol 273 ◽  
pp. 384-388
Author(s):  
Yu Guo ◽  
Wei Li
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
Harmonic Distortion ◽  
Harmonic Suppression ◽  
Output Terminal ◽  
Class D Amplifier ◽  
Class D ◽  
Small Distortion ◽  
Harmonic Components

Class D power amplifier has the advantages of simple structure, small volume, high efficiency, large output power, and small distortion, therefore is applied widely in the audio power amplifier integrated circuit. But because of existing higher harmonic components, the total harmonic distortion (THD) is high. In this paper, for the characteristics of class D amplifier, a feed-forward control circuit is added to the amplifier output terminal, and a composite filter is used to inhibit output harmonics further. The simulation results show that, the method can reduce the system THD effectively and improve the performance of the amplifier.

scholarly journals Ripple Compensation for a Class-D Amplifier

2015 ◽  
Vol 75 (4) ◽  
pp. 1536-1552 ◽  
Author(s):  
Stephen M. Cox ◽  
H. du Toit Mouton
Keyword(s):  
Class D Amplifier ◽  
Class D

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

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