Through silicon via time domain crosstalk modeling considering hysteretic coupling capacitance

Author(s):  
S. Piersanti ◽  
F. de Paulis ◽  
A. Orlandi ◽  
Dong-Hyun Kim ◽  
Jonghyun Cho ◽  
...  
2013 ◽  
Vol 6 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Keiji Matsumoto ◽  
Hiroaki Otsuka ◽  
Osamu Horiuchi ◽  
Young Gun Han ◽  
Woon Choi ◽  
...  

2017 ◽  
Vol 24 (1) ◽  
pp. 139-148 ◽  
Author(s):  
Sikder Sunbeam Islam ◽  
Mohammad Rashed Iqbal Faruque ◽  
Mohammad Tariqul Islam

AbstractThe design and absorption analysis of a unit cell of a new multiband split-S-shaped metamaterial is presented in this paper. The computer simulation technology (CST) software based on finite-difference time-domain method was used for the design of the unit cell and its S-parameter calculations. The proposed design shows the resonance frequency within the S-band, X-band, and Ku-band of the microwave spectra. In addition, the proposed material can be used in ε-negative, μ-negative, near-zero refractive index, and double-negative applications as well. The measured result is presented, which shows good conformity with the simulated result. The material shows nearly the same characteristics with bit shifted transmittance at the higher frequency side after reducing the coupling capacitance in the y- or z-axis of the proposed metamaterial. Moreover, it is evident from the investigation that, for shifting the lower ring in the z-axis, 15% more absorption can be achieved for the proposed metamaterial. The simple design, multipurpose applications, and compact size have made the design novel in the electromagnetic paradigm.


Author(s):  
Stephane Barbeau ◽  
Jesse Alton ◽  
Martin Igarashi

Abstract Electro Optical Terahertz Pulse Reflectometry (EOTPR), a terahertz based Time Domain Reflectometry (TDR) technique, has been evaluated on Flip Chip (FC) and 3D packages. The reduced size and complexity of these new generations of advanced IC products necessitate non-destructive techniques with increased fault isolation accuracy. The minimum accuracy achievable with conventional TDR is approximately 1000μm. Here, we show that EOTPR is able to differentiate all of the critical features in a 3D FC package, such as μC4 and Through Silicon Via (TSV), and is capable of producing distance-to-defect accuracy of less than 20μm, a significant improvement over conventional microwave based TDR techniques.


Sign in / Sign up

Export Citation Format

Share Document