Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

2002 ◽  
Author(s):  
S. Merchant ◽  
E. Arnold ◽  
H. Baumgart ◽  
R. Egloff ◽  
T. Letavic ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Oxide Thickness ◽  
Buried Oxide ◽  
Drift Length

Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors

2016 ◽  
Vol 63 (10) ◽  
pp. 4003-4010 ◽  
Author(s):  
KrishnanNadar Savithry Nikhil ◽  
Nandita DasGupta ◽  
Amitava DasGupta ◽  
Anjan Chakravorty
Keyword(s):  
Oxide Thickness ◽  
Buried Oxide

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

2011 ◽  
Vol 26 (9) ◽  
pp. 095005 ◽  
Author(s):  
S E Jamali Mahabadi ◽  
Ali A Orouji ◽  
P Keshavarzi ◽  
Hamid Amini Moghadam
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Self Heating ◽  
Buried Oxide

Hot-carrier degradation behavior of thin-film SOI nMOSFET with isolation scheme and buried oxide thickness

2000 ◽  
Vol 47 (5) ◽  
pp. 1013-1017 ◽  
Author(s):  
Jong-Wook Lee ◽  
Hyung-Ki Kim ◽  
Woo-Han Lee ◽  
Min-Rok Oh ◽  
Yo-Hwan Koh
Keyword(s):  
Thin Film ◽  
Oxide Thickness ◽  
Degradation Behavior ◽  
Hot Carrier ◽  
Buried Oxide ◽  
Hot Carrier Degradation

A New Slope SOI-LDMOS High-Voltage Power Device

2012 ◽  
Vol 236-237 ◽  
pp. 797-800
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Electrical Field ◽  
New Device ◽  
Buried Oxide ◽  
Drain Electrode ◽  
Surface Electric Field

A slope SOI-LDMOS power device is proposed for high-voltage. When a positive bais is applied to the drain electrode, holes are induced and astricted by the slope buried oxide layer. So a high density positive charge layer is formed on the buried oxide layer. The electrical field in the buried oxide is improved as well as vertical breakdown voltage by the layer. Because the thickness of the drift region linearly increases from the source to the drain, the surface electric field is optimized, resulting in increase of lateral breakdown voltage. In this paper, the electric characteristics of the new device are simulated by Medici softerware. The result is shown that above 600 V breakdown voltage is obtained at 1μm thick buried oxide layer. The breakdown voltage is higher by three times than that of conventional SOI LDMOS.

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