scholarly journals Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate

2021 ◽  
pp. 1-1
Author(s):  
S. Ohmi ◽  
Y. Ohtaguchi ◽  
A. Ihara ◽  
H. Morita
Keyword(s):  
Thin Films ◽  
Hafnium Nitride

Tunable electrical and optical properties of hafnium nitride thin films

2010 ◽  
Vol 96 (7) ◽  
pp. 071914 ◽  
Author(s):  
I. L. Farrell ◽  
R. J. Reeves ◽  
A. R. H. Preston ◽  
B. M. Ludbrook ◽  
J. E. Downes ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Hafnium Nitride

scholarly journals Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates

Crystals ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 78
Author(s):  
Nguentra Sucheewa ◽  
Winadda Wongwiriyapan ◽  
Annop Klamchuen ◽  
Michiko Obata ◽  
Masatsugu Fujishige ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Sers Substrate ◽  
Hafnium Nitride ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Reactive Gas

This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.

Evaluation of hafnium nitride thin films sputtered from a hafnium nitride target

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 589-591 ◽  
Author(s):  
T. Kanzawa ◽  
N. Setojima ◽  
Y. Miyata ◽  
Y. Gotoh ◽  
H. Tsuji ◽  
...  
Keyword(s):  
Thin Films ◽  
Hafnium Nitride

Influence of N2 flow ratio on the properties of hafnium nitride thin films prepared by DC magnetron sputtering

2007 ◽  
Vol 253 (20) ◽  
pp. 8538-8542 ◽  
Author(s):  
Longyan Yuan ◽  
Guojia Fang ◽  
Chun Li ◽  
Mingjun Wang ◽  
Nishuang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Flow Ratio ◽  
Dc Magnetron Sputtering ◽  
Hafnium Nitride

Mechanical and Structural Behavior of HfN Thin Films Deposited by Direct Current and Mid-Frequency Magnetron Sputtering

2021 ◽  
Vol 21 (7) ◽  
pp. 4125-4128
Author(s):  
Sung-Yong Chun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Nitrogen Atmosphere ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hafnium Nitride ◽  
Duty Cycles ◽  
Diffraction Patterns

Nanocrystalline HfN thin films were deposited onto silicon substrates with direct current magnetron sputtering (dcMS) and mid-frequency magnetron sputtering (mfMS) by using hafnium metallic target with 3-inch diameter and 99.9% purity in argon/nitrogen atmosphere, under 4 different pulse frequencies and duty cycles. In order to evaluate the structural, morphological and mechanical properties, we used X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), nanoindentation tests. X-ray diffraction patterns show that films sputtered in dcMS mode have a mixed δ-HfN and HfN0.4 phases, whereas mfMS favor a single δ-HfN phase. mfMS leads to films with the higher mechanical hardness and smaller surface roughness than those of films deposited by dcMS. Hafnium nitride films with a single δ-HfN phase show the highest hardness values of 24.5 GPa while those of mixed δ-HfN and HfN0.4 phases show the lowest 18.3 GPa. In summary, the sputtering technique has a crucial role on the properties of the film and can be suitable used to adjust the structure and hardness of HfN films.

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