Low resistivity hafnium nitride thin films as diffusion barriers for Cu interconnects

2007 ◽  
Author(s):  
Roy A. Araujo ◽  
X. Zhang ◽  
H. Wang
Keyword(s):  
Thin Films ◽  
Diffusion Barriers ◽  
Low Resistivity ◽  
Cu Interconnects ◽  
Hafnium Nitride

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

scholarly journals Photo-activity and low resistivity in N/Nb Co-doped TiO2 thin films by combinatorial AACVD

2016 ◽  
Vol 4 (2) ◽  
pp. 407-415 ◽  
Author(s):  
Nicholas P. Chadwick ◽  
Emily N. K. Glover ◽  
Sanjayan Sathasivam ◽  
Sulaiman N. Basahel ◽  
Shaeel A. Althabaiti ◽  
...  
Keyword(s):  
Thin Films ◽  
Functional Properties ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Low Resistivity ◽  
Co Doping ◽  
Co Doped

Combinatorial AACVD has achieved the production of various niobium/nitrogen co-doped TiO2 materials in a single film. The co-doping concentrations have been correlated with functional properties.

Investigation of Electrical and Optical Properties of Low Resistivity Indium Oxide Thin Films

2021 ◽  
Vol 102 (3) ◽  
pp. 95-111
Author(s):  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Oxide ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Low Resistivity

Characteristics of sputtered TaBx thin films as diffusion barriers between copper and silicon

2003 ◽  
Vol 220 (1-4) ◽  
pp. 349-358 ◽  
Author(s):  
Shun-Tang Lin ◽  
Yu-Lin Kuo ◽  
Chiapyng Lee
Keyword(s):  
Thin Films ◽  
Diffusion Barriers

Preparation of CuAlO2 thin films with high transparency and low resistivity using sol–gel method

2011 ◽  
Vol 61 (3) ◽  
pp. 565-569 ◽  
Author(s):  
Yang Ren ◽  
Gaoyang Zhao ◽  
Chenxi Zhang ◽  
Yuanqing Chen
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
High Transparency ◽  
Gel Method ◽  
Sol Gel Method ◽  
Low Resistivity

A Study on the Structure and the Photoelectrical Properties of the Al-Doped ZnO Thin Films by Atomic Layer Deposition in Low Temperatures

2018 ◽  
Vol 18 (12) ◽  
pp. 8333-8336 ◽  
Author(s):  
Guangde Wang ◽  
Xinyu Zhang ◽  
Wenlong Jiang ◽  
Lizhong Wang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Visible Region ◽  
Atomic Layer ◽  
Transparent Electrode ◽  
Low Resistivity ◽  
Photoelectrical Properties ◽  
Photoelectric Properties ◽  
Layer Deposition ◽  
Doping Ratio

The AZO transparent conductive films are prepared by the atomic layer deposition (ALD) at a low temperature of 150 °C. The different Al–Zn doping ratios were designed during the deposition. The phase structure of the films was characterized by XRD, the electrical properties of thin films were analyzed by the Holzer test, and the optical properties of thin films were analyzed by the UV-3600 (UV-VIS-NIR) spectrophotometer. The results showed that all the films preferred the orientation of the C axis during the growth process, the AZO films have a very low resistivity of 6.955×10−4 Ω·cm with the Al doping ratio by 2%, the deposition temperature is 150 °C and the thickness of the film is 200 nm. The transmission of AZO films with the different doping ratios in the visible region is 85%. The proper doping ratio can be selected to get the excellent photoelectric properties of AZO thin films. Such low resistivity AZO transparent conductive film is expected to replace the ITO as the transparent electrode for the organic light-emitting devices and the other new generation of the optoelectronic devices.

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