Open-Loop Gate Control for Optimizing the Turn-ON Transition of SiC MOSFETs

Author(s):  
Yang Han ◽  
Haifeng Lu ◽  
Yongdong Li ◽  
Jianyun Chai
Keyword(s):  
Turn On ◽  
Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1381
Author(s):  
Wojciech Kołodziejski ◽  
Stanisław Kuta ◽  
Jacek Jasielski

This paper presents new architectures and implementations of original open-loop Class-BD audio amplifiers with balanced Common-Mode output. The output stage of each proposed amplifier includes the typical H-bridge with four MOSFETs and four additional MOSFET switches that balance and keep the Common-Mode output constant. The presented amplifiers employ the extended NBDD PWM or PSC PWM modulation scheme. When the output stage is built only on NMOSFET transistors, gate drivers require a floating power supply, using a self-boost charge pump with capacitive isolation of the control signal. The use of complementary MOSFETs in the output stage greatly simplifies gate control systems. The proposed amplifiers were compared to the typical Class-BD configuration, using the optimal NBDD modulation with respect to audio performance of the Differential-Mode (DM) and Common-Mode (CM) outputs. Basic SPICE simulations and experimental studies have shown that the proposed Class-BD amplifiers have similar audio performance to the prototype with the optimal NBDD modulation scheme, while at the same time having a balanced constant voltage CM output, thus eliminating the main contributor to radiation emission. As a result, the filtering of the DM output signals can be greatly simplified, while the filtering of the CM output signals can be theoretically eliminated. Practically, due to the timing errors added by the gate drivers, spikes are generated at the CM output, which are very easy to filter out by the reduced LC output filter, even at very low L.


2010 ◽  
Vol 645-648 ◽  
pp. 1177-1180 ◽  
Author(s):  
Immo Koch ◽  
Wolf Rüdiger Canders

The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.


2012 ◽  
Vol 717-720 ◽  
pp. 1155-1158 ◽  
Author(s):  
Heather O'Brien ◽  
William Shaheen ◽  
Aderinto Ogunniyi ◽  
Charles Scozzie ◽  
Q. Jon Zhang ◽  
...  

The Army Research Laboratory has collaborated with Cree, Inc. and Silicon Power Corp. to develop 9 kV-blocking, 1.0 cm2Super-GTOs. In this study, several 1.0 cm2GTOs were individually switched up to 6.0 kA in a low-inductance, highdI/dt(2.1 kA/µs) circuit to evaluate turn-on delay and optimize the gate control. Turn-on delay was evaluated relative to gate drive current, and the delay was reduced by 1.1 µs when gate amplitude was increased from 1 A to 8 A. Increasing gate current delivered to each GTO also successfully reduced variation in turn-on delay from device to device by at least 50%, and mitigated mismatch in turn-on between pairs of GTOs switched in parallel. As silicon carbide material processing and device development continue to evolve, the ultimate solution will be to reduce remaining material defects and to control minority carrier diffusion length through more uniform doping across the wafer. These steps will enable modules of parallel GTOs to perform at maximum capability.


Author(s):  
H.-J. Ou ◽  
J. M. Cowley ◽  
A. A. Higgs

A scanning ion gun system has been installed on the specimen preparation chamber (pressure ∼5xl0-8 torr) of the VG-HB5 STEM microscope. By using the specimen current imaging technique, it is possible to use an ion beam to sputter-clean the preferred surface region on a bulk sample. As shown in figure 1, the X-Y raster-gate control of the scanning unit for the Krato Mini-Beam I is used to minimize the beam raster area down to a 800μm x800μm square region. With beam energy of 2.5KeV, the MgO cleavage surface has been ion sputter-cleaned for less than 1 minute. The carbon film or other contaminant, introduced during the cleavage process in air, is mostly removed from the MgO crystal surfaces.The immediate SREM inspection of this as-cleaned MgO surface, within the adjacent STEM microscope, has revealed the detailed surface structures of atomic steps, which were difficult to observe on the as-cleaved MgO surfaces in the previous studies.


Author(s):  
Byunghee Hwang ◽  
Tae-Il Kim ◽  
Hyunjin Kim ◽  
Sungjin Jeon ◽  
Yongdoo Choi ◽  
...  

A ubiquinone-BODIPY photosensitizer self-assembles into nanoparticles (PS-Q-NPs) and undergoes selective activation within the highly reductive intracellular environment of tumors, resulting in “turn-on” fluorescence and photosensitizing activities.


1989 ◽  
Vol 49 (1) ◽  
pp. 161-168
Author(s):  
A. Bülent Özgü Ler ◽  
Vasfi Eldem
Keyword(s):  

1973 ◽  
Vol 18 (12) ◽  
pp. 626-627
Author(s):  
EDWARD A. JACOBSON
Keyword(s):  

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