Modelling and Correlation of Two Thermal Paths in Frequency-domain Thermal Impedance Model of Power Module

Author(s):  
Mengqi Xu ◽  
Ke Ma ◽  
Bo Liu ◽  
Xu Cai
2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.


Geophysics ◽  
1984 ◽  
Vol 49 (11) ◽  
pp. 1993-2003 ◽  
Author(s):  
Ian M. Johnson

A method for the extraction of Cole-Cole spectral parameters from time‐domain induced polarization data is demonstrated. The instrumentation required to effect the measurement and analysis is described. The Cole-Cole impedance model is shown to work equally well in the time domain as in the frequency domain. Field trials show the time‐domain method to generate spectral parameters consistent with those generated by frequency‐domain surveys. This is shown to be possible without significant alteration to field procedures. Cole-Cole time constants of up to 100 s are shown to be resolvable given a transmitted current of a 2 s pulse‐time. The process proves to have added usefulness as the Cole-Cole forward solution proves an excellent basis for quantifying noise in the measured decay.


2013 ◽  
Vol 84 (2) ◽  
pp. 024901 ◽  
Author(s):  
Francesco Casalegno ◽  
Andrea De Marchi ◽  
Valter Giaretto

2008 ◽  
Vol 23 (1) ◽  
pp. 206-217 ◽  
Author(s):  
R. Azar ◽  
R. Udrea ◽  
Wai Tung Ng ◽  
F. Dawson ◽  
W. Findlay ◽  
...  

Author(s):  
Brian Rowden ◽  
Alan Mantooth ◽  
Simon Ang ◽  
Alex Lostetter ◽  
Jared Hornberger ◽  
...  

Wide band gap semiconductors such as silicon carbide (SiC) provide the potential for significant advantages over traditional silicon alternatives including operation at high temperatures for extreme environments and applications, higher voltages reducing the number of devices required for high power applications, and higher switching frequencies to reduce the size of passive elements in the circuit and system. All of these attributes contribute to increased power density at the device and system levels, but the ability to exploit these properties requires complementary high temperature packaging techniques and materials to connect these semiconductors to the system around them. With increasing temperature, the balance of thermal, mechanical, and electrical properties for these packaging materials becomes critical to ensure low thermal impedance, high reliability, and minimal electrical losses. A primary requirement for module operation at high temperatures is a suitable high temperature attachment technology at both the device and module levels. This paper presents a transient liquid phase (TLP) attachment method implemented to provide lead-free bonding for a SiC half-bridge power module. This module was designed for continuous operation above 250 °C for use as a building block for multiple system level applications including hybrid electric vehicles, distributed energy resources, and multilevel converters. A silver-based TLP system was used to accommodate the device and substrate bond with a single TLP system compatible with the device metallurgy. A SiC power module was built using this system and electrically tested at a 250 °C continuous junction temperature. The TLP bonding process was demonstrated for multiple devices in parallel and large substrate bonding surfaces with traditional device and substrate metallization and no requirements for surface planarization or treatment. The results are presented in the paper.


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