Ultra-Low Switching Voltage Induced by Inserting SiO2Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory
2016 ◽
Vol 37
(10)
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pp. 1276-1279
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2014 ◽
Vol 35
(6)
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pp. 630-632
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2016 ◽
Vol 63
(12)
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pp. 4737-4743
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2015 ◽
Vol 36
(6)
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pp. 564-566
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2016 ◽
Vol 37
(4)
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pp. 408-411
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2015 ◽
Vol 36
(11)
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pp. 1138-1141
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2016 ◽
Vol 63
(11)
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pp. 4288-4294
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