Effects of erbium doping of indium tin oxide electrode in resistive random access memory

2016 ◽  
Vol 9 (3) ◽  
pp. 034202 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Oxide Electrode ◽  
Erbium Doping ◽  
Access Memory ◽  
Indium Tin Oxide Electrode

Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access Memory

2016 ◽  
Vol 37 (5) ◽  
pp. 584-587 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Oxide Electrode ◽  
Access Memory ◽  
Indium Tin Oxide Electrode

Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

2015 ◽  
Vol 36 (11) ◽  
pp. 1138-1141 ◽  
Author(s):  
Ji Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Buffering Effect

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

2016 ◽  
Vol 63 (11) ◽  
pp. 4288-4294 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11585-11590 ◽  
Author(s):  
Cong Ye ◽  
Jia-Ji Wu ◽  
Chih-Hung Pan ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Supercritical Fluid ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Ito Electrode

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory

2016 ◽  
Vol 63 (12) ◽  
pp. 4769-4775 ◽  
Author(s):  
Po-Hsun Chen ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory
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