Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment

2015 ◽  
Vol 36 (11) ◽  
pp. 1138-1141 ◽  
Author(s):  
Ji Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Buffering Effect

Effects of erbium doping of indium tin oxide electrode in resistive random access memory

2016 ◽  
Vol 9 (3) ◽  
pp. 034202 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Oxide Electrode ◽  
Erbium Doping ◽  
Access Memory ◽  
Indium Tin Oxide Electrode

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

2016 ◽  
Vol 63 (11) ◽  
pp. 4288-4294 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

scholarly journals Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

RSC Advances ◽  
2017 ◽  
Vol 7 (19) ◽  
pp. 11585-11590 ◽  
Author(s):  
Cong Ye ◽  
Jia-Ji Wu ◽  
Chih-Hung Pan ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Supercritical Fluid ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Ito Electrode

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM).

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory

2016 ◽  
Vol 63 (12) ◽  
pp. 4769-4775 ◽  
Author(s):  
Po-Hsun Chen ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access Memory

2016 ◽  
Vol 37 (5) ◽  
pp. 584-587 ◽  
Author(s):  
Po-Hsun Chen ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Oxide Electrode ◽  
Access Memory ◽  
Indium Tin Oxide Electrode

Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

2014 ◽  
Vol 1633 ◽  
pp. 105-110 ◽  
Author(s):  
Yiran Wang ◽  
Bing Chen ◽  
Dong Liu ◽  
Bin Gao ◽  
Lifeng Liu ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Data Retention ◽  
Access Memory ◽  
Solution Processed ◽  
Bipolar Resistance Switching

ABSTRACTA solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

2014 ◽  
Vol 35 (6) ◽  
pp. 630-632 ◽  
Author(s):  
Rui Zhang ◽  
Tai-Fa Young ◽  
Min-Chen Chen ◽  
Hsin-Lu Chen ◽  
Shu-Ping Liang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory
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