Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

2014 ◽  
Vol 35 (6) ◽  
pp. 630-632 ◽  
Author(s):  
Rui Zhang ◽  
Tai-Fa Young ◽  
Min-Chen Chen ◽  
Hsin-Lu Chen ◽  
Shu-Ping Liang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

2015 ◽  
Vol 36 (6) ◽  
pp. 564-566 ◽  
Author(s):  
Chih-Yang Lin ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Reducing operation voltages by introducing a low-kswitching layer in indium–tin-oxide-based resistance random access memory

2016 ◽  
Vol 9 (6) ◽  
pp. 061501 ◽  
Author(s):  
Fu-Yuan Jin ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102772-102779 ◽  
Author(s):  
Nodo Lee ◽  
Yves Lansac ◽  
Hyunsang Hwang ◽  
Yun Hee Jang
Keyword(s):  
Oxygen Vacancy ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Formation ◽  
Access Memory ◽  
Half Metallic ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Oxygen Vacancy Formation

The oxygen vacancy formation in half-metallic perovskite LSMO itself plays an interesting role in the resistive switching.

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